FDS6982S

Mfr. #:: FDS6982S
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET SO-8 DUAL N-CH
Lifecycle:: New from this manufacturer.
Datasheet:: FDS6982S Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 6.3 A

Rds On - Drain-Source Resistance:: 16 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2 W

Configuration:: Dual

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Series:: FDS6982S

Transistor Type:: 2 N-Channel

Type:: MOSFET

Width:: 3.9 mm

Brand:: ON Semiconductor / Fairchild

Fall Time:: 7 ns, 14 ns

Product Type:: MOSFET

Rise Time:: 14 ns, 10 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 21 ns, 34 ns

Typical Turn-On Delay Time:: 10 ns

Part # Aliases:: FDS6982S_NL

Unit Weight:: 0.008127 oz

Tags: FDS6982S, FDS6982, FDS698, FDS69, FDS6, FDS

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS6982S Description

***et: Transistor MOSFET Array Dual N-CH 30V 6.3A/8.6A 8-Pin SOIC T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel / Schottky Diode; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.6A; On Resistance, Rds(on):13.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, DUAL, NN, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:6.3A; Cont Current Id N Channel 3:8.6A; Current Id Max:8.6A; Current Temperature:25°C; Forward Current If(AV):3A; Forward Voltage VF Max:700mV; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance Channel 1:28mohm; On State Resistance N Channel 2:16mohm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:30A; Pulse Current Idm N Channel 2:20A; Pulse Current Idm N Channel 3:30A; SMD Marking:FDS6982S; Termination Type:SMD; Voltage Vds N Channel 1:30V; Voltage Vds N Channel 2:30V; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

***(Formerly Allied Electronics): SI4936BDY-T1-E3 Dual N-channel MOSFET Transistor; 5.9 A; 30 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 30 V 0.035 Ohms Surface Mount Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R / MOSFET 2N-CH 30V 6.9A 8-SOIC

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6900mA; On Resistance, Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:20V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, DUAL, N, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:4936; Current Id Max:6.9A; N-channel Gate Charge:4.5nC; On State Resistance @ Vgs = 4.5V:51mohm; On State resistance @ Vgs = 10V:35mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***p One Stop Global: Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R

***enic: 30V 8.9A 11m´Î@10V12A 1.4W 3V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS

***S: French Electronic Distributor since 1988

***ment14 APAC: N CHANNEL MOSFET, 30V, 12A; Transistor P; N CHANNEL MOSFET, 30V, 12A; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:3V; No. of Pins:8

***ure Electronics: Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8

***et Europe: Transistor MOSFET Array Dual N-CH 30V 7.1A 8-Pin SOIC T/R

***nell: MOSFET, NN, SO-8; Module Configuration:Dual N Channel; Transistor Polarity:Dual N; Max Current Id:7.1A; Max Voltage Vds:30V; On State Resistance:0.028ohm; Rds Measurement Voltage:10V; Typ Voltage Vgs th:3V; Power Dissipation:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; Case Style:SOIC; Termination Type:SMD; Transistor Type:MOSFET; Cont Current Id:7.1A; Max Voltage Vgs:20V; Min Voltage Vgs th:1V; On State Resistance @ Vgs = 4.5V:0.045ohm; On State resistance @ Vgs = 10V:0.028ohm; Pulse Current Idm:33.6A; Typ Voltage Vds:30V; Voltage Vgs Rds on Measurement:10V

***et: Transistor MOSFET Array Dual N-Channel 30V 6.3A/8.6A 8-Pin SOIC N T/R

***nell: MOSFET, DUAL, NN, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Cont Current Id N Channel 2: 8.6A; Cont Current Id N Channel 3: 6.3A; Current Id Max: 8.6A; No. of Transistors: 2; On State Resistance Channel 1: 15mohm; On State Resistance N Channel 2: 28mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation N Channel 2: 2W; Power Dissipation N Channel 3: 2W; Pulse Current Idm: 30A; Pulse Current Idm N Channel 2: 30A; Pulse Current Idm N Channel 3: 20A; SMD Marking: FDS6982; Voltage Vds N Channel 1: 30V; Voltage Vds N Channel 2: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 2.2V

***rchild Semiconductor: This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrench® MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction losses (less than 20mW at VGS = 4.5V).

***ark: Mosfet Transistor, N Channel, 10.8 A, 30 V, 0.011 Ohm, 4.5 V, 3 V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20

***eco: Transistor MOSFET N Channel 30 Volt 10.8.6 Amp 8 Pin SOIC

***ure Electronics: Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissi

***et Japan: Transistor MOSFET Array Dual N-CH 30V 6.9A 8-Pin SOIC T/R

***ineon SCT: Automotive Q101 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 6.9A I(D), N-Channel, Metal-oxide Semiconductor FET

***nell: MOSFET, AUTO, DUAL N-CH, 30V, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2.4W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

Market price

Part #	Mfg.	Description	Stock	Price
FDS6982S DISTI # FDS6982S-ND	ON Semiconductor	MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDS6982S DISTI # 34C0179	ON Semiconductor	N CHANNEL / SCHOTTKY MOSFET, 30V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel + Schottky,Continuous Drain Current Id:8.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:10V , RoHS Compliant: Yes	0
FDS6982S DISTI # 512-FDS6982S	ON Semiconductor	MOSFET SO-8 DUAL N-CH RoHS: Compliant	0
FDS6982S_Q DISTI # 512-FDS6982S_Q	ON Semiconductor	MOSFET SO-8 DUAL N-CH RoHS: Not compliant	0
FDS6982S_D84Z DISTI # 512-FDS6982S_D84Z	ON Semiconductor	MOSFET NChannel PowerTrench Notebook Power RoHS: Not compliant	0
FDS6982S	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	85	1000:$1.2700 500:$1.3300 100:$1.3900 25:$1.4500 1:$1.5600
FDS6982S	Freescale Semiconductor	MOSFET Transistor, Matched Pair, N-Channel, SO	4731	3172:$0.4515 1489:$0.4730 1:$1.7200
FDS6982S	Fairchild Semiconductor Corporation	MOSFET Transistor, Matched Pair, N-Channel, SO	2643	1489:$0.4730 333:$0.5375 1:$1.7200
FDS6982S	Fairchild Semiconductor Corporation	MOSFET Transistor, Matched Pair, N-Channel, SO	8	9:$2.5000 2:$3.0000 1:$4.0000
FDS6982S	Fairchild Semiconductor Corporation		1590
FDS6982S	Fairchild Semiconductor Corporation		2272
FDS6982S	Fairchild Semiconductor Corporation		3715
FDS6982S	Fairchild Semiconductor Corporation		1259
FDS6982S	Fairchild Semiconductor Corporation	INSTOCK	1640
FDS6982S DISTI # 9844759	ON Semiconductor	RoHS: Compliant	0	1:$4.1400 25:$3.2500 100:$2.6900 250:$1.9800

Image	Part #	Description
	Mfr.#: FDS6982S OMO.#: OMO-FDS6982S	MOSFET SO-8 DUAL N-CH
	Mfr.#: FDS6609A OMO.#: OMO-FDS6609A	MOSFET SO-8
	Mfr.#: FDS6690AS OMO.#: OMO-FDS6690AS-ON-SEMICONDUCTOR	MOSFET N-CH 30V 10A 8SOIC
	Mfr.#: FDS6375-NF40 OMO.#: OMO-FDS6375-NF40-1190	New and Original
	Mfr.#: FDS6575-NL OMO.#: OMO-FDS6575-NL-1190	New and Original
	Mfr.#: FDS6894AZ-NL OMO.#: OMO-FDS6894AZ-NL-1190	New and Original
	Mfr.#: FDS6910 OMO.#: OMO-FDS6910-ON-SEMICONDUCTOR	MOSFET 2N-CH 30V 7.5A 8SOIC
	Mfr.#: FDS6910-NL OMO.#: OMO-FDS6910-NL-1190	New and Original
	Mfr.#: FDS6986S-NBBM019A OMO.#: OMO-FDS6986S-NBBM019A-1190	New and Original
	Mfr.#: FDS6690AS-CUT TAPE OMO.#: OMO-FDS6690AS-CUT-TAPE-1190	New and Original

FDS6982S

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes