SI4532CDY-T1-GE3

Mfr. #:: SI4532CDY-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET N/P-CH 30V 6A 8-SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: SI4532CDY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SI4532CDY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Arrays

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SI4532CDY-GE3

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: 8-SOIC (0.154", 3.90mm Width)

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: 8-SO

Configuration: Dual Dual Drain

FET-Type: N and P-Channel

Power-Max: 2.78W

Transistor-Type: 1 N-Channel 1 P-Channel

Drain-to-Source-Voltage-Vdss: 30V

Input-Capacitance-Ciss-Vds: 305pF @ 15V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 6A, 4.3A

Rds-On-Max-Id-Vgs: 47 mOhm @ 3.5A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 9nC @ 10V

Pd-Power-Dissipation: 2.78 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 6 nS 7.7 nS

Rise-Time: 12 nS 13 nS

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 6 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Resistance: 38 mOhms 73 mOhms

Transistor-Polarity: N-Channel P-Channel

Typical-Turn-Off-Delay-Time: 14 nS 17 nS

Typical-Turn-On-Delay-Time: 7 nS 5.5 nS

Qg-Gate-Charge: 6 nC 7.8 nC

Forward-Transconductance-Min: 7 S 7 S

Channel-Mode: Enhancement

Tags: SI4532CDY-T1, SI4532CDY-T, SI4532C, SI4532, SI453, SI45, SI4

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4532CDY-T1-GE3 More Information

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Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

Part #	Mfg.	Description	Stock	Price
SI4532CDY-T1-GE3 DISTI # SI4532CDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 30V 6A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.2791
SI4532CDY-T1-GE3 DISTI # SI4532CDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 30V 6A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3172 500:$0.3966 100:$0.5353 10:$0.6940 1:$0.7900
SI4532CDY-T1-GE3 DISTI # SI4532CDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 30V 6A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3172 500:$0.3966 100:$0.5353 10:$0.6940 1:$0.7900
SI4532CDY-T1-GE3 DISTI # SI4532CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R (Alt: SI4532CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4532CDY-T1-GE3 DISTI # SI4532CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R (Alt: SI4532CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.3539 5000:€0.2409 10000:€0.2069 15000:€0.1919 25000:€0.1779
SI4532CDY-T1-GE3 DISTI # SI4532CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4532CDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2539 5000:$0.2469 10000:$0.2369 15000:$0.2299 25000:$0.2239
SI4532CDY-T1-GE3 DISTI # 05W6945	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 05W6945) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.7000 10:$0.5590 25:$0.5140 50:$0.4690 100:$0.4240 250:$0.3870 500:$0.3500
SI4532CDY-T1-GE3 DISTI # 15R5049	Vishay Intertechnologies	MOSFET, NP CHANNEL, 30V, 6/-4.3A, SOIC-8, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$0.2400 2500:$0.2380 5000:$0.2310 10000:$0.2230
SI4532CDY-T1-GE3 DISTI # 05W6945	Vishay Intertechnologies	MOSFET, NP CHANNEL, 30V, 6/-4.3A, SOIC-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes	0	1:$0.7000 10:$0.5590 25:$0.5140 50:$0.4690 100:$0.4240 250:$0.3870 500:$0.3500 1000:$0.2800
SI4532CDY-T1-GE3 DISTI # 70459541	Vishay Siliconix	SI4532CDY-T1-GE3 Dual N/P-channel MOSFET Transistor,4.3 A,6 A,30V,8-Pin SOIC RoHS: Compliant	0	2500:$0.3410 5000:$0.3250 10000:$0.3170
SI4532CDY-T1-GE3 DISTI # 781-SI4532CDY-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 N&P PAIR RoHS: Compliant	0	1:$0.7000 10:$0.5590 100:$0.4240 500:$0.3500 1000:$0.3330 2500:$0.2920
SI4532CDY-T1-GE3 DISTI # TMOSP10576	Vishay Intertechnologies	CMOS30V6A47mOhm SO-8 RoHS: Compliant	Stock DE - 0Stock US - 0	2500:$0.1990
SI4532CDY-T1-GE3 DISTI # SI4532CDY-GE3	Vishay Intertechnologies	N+P-Ch 30V 6/4,3A 1,78W SO8 RoHS: Compliant	0	50:€0.2675 100:€0.2075 500:€0.1775 2500:€0.1715
SI4532CDY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 N&P PAIR RoHS: Compliant	Americas -	2500:$0.2340 5000:$0.2210 10000:$0.2140
SI4532CDY-T1-GE3 DISTI # 1779268	Vishay Intertechnologies	MOSFET, NP-CH, 30V, SO8 RoHS: Compliant	0	5:£0.4420 25:£0.3780 100:£0.3130 250:£0.2920 500:£0.2700
SI4532CDY-T1-GE3 DISTI # 1779268	Vishay Intertechnologies	MOSFET, NP-CH, 30V, SO8 RoHS: Compliant	0	1:$1.1100 10:$0.8850 100:$0.6710 500:$0.5540 1000:$0.4910
SI4532CDY-T1-GE3 DISTI # 1779268RL	Vishay Intertechnologies	MOSFET, NP-CH, 30V, SO8 RoHS: Compliant	0	1:$1.1100 10:$0.8850 100:$0.6710 500:$0.5540 1000:$0.4910

Image	Part #	Description
	Mfr.#: SI4532CDY-T1-GE3 OMO.#: OMO-SI4532CDY-T1-GE3	MOSFET 30V Vds 20V Vgs SO-8 N&P PAIR
	Mfr.#: SI4532CDY-T1-GE3-CUT TAPE OMO.#: OMO-SI4532CDY-T1-GE3-CUT-TAPE-1190	New and Original
	Mfr.#: SI4532CDY OMO.#: OMO-SI4532CDY-1190	New and Original
	Mfr.#: SI4532CDY-T1 OMO.#: OMO-SI4532CDY-T1-1190	New and Original
	Mfr.#: SI4532CDY-T1-E3 OMO.#: OMO-SI4532CDY-T1-E3-1190	New and Original
	Mfr.#: SI4532CDY-T1-E3/SI4532AD OMO.#: OMO-SI4532CDY-T1-E3-SI4532AD-1190	New and Original
	Mfr.#: SI4532CDY-T1-GE3 OMO.#: OMO-SI4532CDY-T1-GE3-VISHAY	MOSFET N/P-CH 30V 6A 8-SOIC
	Mfr.#: SI4532CDY-TI OMO.#: OMO-SI4532CDY-TI-1190	New and Original

SI4532CDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes