| PartNumber | SI4532CDY-T1-GE3 | SI4532ADY-T1-E3 | SI4532ADY-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs SO-8 N&P PAIR | MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3 | MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 4.3 A, 6 A | - | - |
| Rds On Drain Source Resistance | 47 mOhms, 89 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 6 nC, 7.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.78 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI4 | SI4 | SI4 |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 7 S | - | - |
| Fall Time | 6 ns, 7.7 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns, 13 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns, 17 ns | - | - |
| Typical Turn On Delay Time | 5.5 ns, 7 ns | - | - |
| Part # Aliases | SI4532CDY-GE3 | SI4532ADY-E3 | SI4532ADY-GE3 |
| Unit Weight | 0.006596 oz | 0.006596 oz | 0.006596 oz |
| Height | - | 1.75 mm | - |
| Length | - | 4.9 mm | - |
| Width | - | 3.9 mm | - |