FDD3N50NZTM

Mfr. #:: FDD3N50NZTM
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET UNIFET2 500V
Lifecycle:: New from this manufacturer.
Datasheet:: FDD3N50NZTM Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 500 V

Id - Continuous Drain Current:: 2.5 A

Rds On - Drain-Source Resistance:: 2.1 Ohms

Vgs th - Gate-Source Threshold Voltage:: 5 V

Vgs - Gate-Source Voltage:: 25 V

Qg - Gate Charge:: 6.2 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 40 W

Configuration:: Single

Packaging:: Reel

Height:: 2.39 mm

Length:: 6.73 mm

Series:: FDD3N50NZ

Transistor Type:: 1 N-Channel

Width:: 6.22 mm

Brand:: ON Semiconductor / Fairchild

Forward Transconductance - Min:: 1.9 S

Fall Time:: 17 ns

Product Type:: MOSFET

Rise Time:: 15 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 26 ns

Typical Turn-On Delay Time:: 10 ns

Unit Weight:: 0.009184 oz

Tags: FDD3N, FDD3, FDD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD3N50NZTM Description

***emi: N-Channel Power MOSFET, UniFETTM II, 500 V, 3 A, 2.5 Ω, DPAK

***el Electronic: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK; UniFET™

*** Source Electronics: MOSFET N-CH 500V DPAK / Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) DPAK T/R

*** Stop Electro: Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts..

***emi: UniFETTM Ultra FRFETTM MOSFET, N-Channel, 500 V, 3 A, 2 Ω, DPAK

***r Electronics: Power Field-Effect Transistor, 3A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***roFlash: Mosfet Transistor, N Channel, 3 A, 500 V, 2.3 Ohm, 10 V, 3.75 V Rohs Compliant: Yes

***icroelectronics: N-CHANNEL 500V - 2.4 Ohm - 3A DPAK Zener-Protected SuperMESH(TM) PowerMOSFET

*** Source Electronics: MOSFET N-CH 500V 3A DPAK / Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK T/R

***ure Electronics: N-Channel 500 V 2.7 Ohm Surface Mount SuperMESH Power MosFet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N-CH, 500V, 3A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Source Voltage Vds:500V; On Resistance

***nell: MOSFET, N-CH, 500V, 3A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C

***(Formerly Allied Electronics): IRFR320TRPBF N-channel MOSFET Transistor; 3.1 A; 400 V; 3-Pin TO-252

***ure Electronics: Single N-Channel 400 V 1.8 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ure Electronics: Single N-Channel 400 V 1.8 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:3.1A; On Resistance Rds(On):1.8Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No

***ment14 APAC: MOSFET, N, 400V, 3.1A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:3.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:12A; SMD Marking:IRFR320; Termination Type:SMD; Voltage Vds:400V; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ical: Trans MOSFET N-CH 500V 2.6A 3-Pin(2+Tab) DPAK T/R

***ser: MOSFETs 500V N-Channel QFET

***el Nordic: Contact for details

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

***ure Electronics: Single N-Channel 500 V 3 O 19 nC Surface Mount Power Mosfet - TO-252 (DPAK)

***ical: Trans MOSFET N-CH 500V 2.4A 3-Pin(2+Tab) DPAK T/R

***S: French Electronic Distributor since 1988

Market price

Part #	Mfg.	Description	Stock	Price
FDD3N50NZTM DISTI # V72:2272_06337837	ON Semiconductor	UNIFET2 500V	2097	1000:$0.3350 500:$0.3598 250:$0.3997 100:$0.4442 25:$0.6162 10:$0.7531 1:$0.9021
FDD3N50NZTM DISTI # V36:1790_06337837	ON Semiconductor	UNIFET2 500V	0	2500000:$0.2705 1250000:$0.2708 250000:$0.2935 25000:$0.3332 2500:$0.3398
FDD3N50NZTM DISTI # FDD3N50NZTMCT-ND	ON Semiconductor	MOSFET N-CH 500V DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2279In Stock	1000:$0.3862 500:$0.4828 100:$0.6107 10:$0.7970 1:$0.9100
FDD3N50NZTM DISTI # FDD3N50NZTMDKR-ND	ON Semiconductor	MOSFET N-CH 500V DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2279In Stock	1000:$0.3862 500:$0.4828 100:$0.6107 10:$0.7970 1:$0.9100
FDD3N50NZTM DISTI # FDD3N50NZTMTR-ND	ON Semiconductor	MOSFET N-CH 500V DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.2969 12500:$0.3047 5000:$0.3164 2500:$0.3398
FDD3N50NZTM DISTI # 29437824	ON Semiconductor	UNIFET2 500V	5000	2500:$0.2978
FDD3N50NZTM DISTI # 27482689	ON Semiconductor	UNIFET2 500V	2097	23:$0.9021
FDD3N50NZTM DISTI # FDD3N50NZTM	ON Semiconductor	Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD3N50NZTM) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2749 15000:$0.2819 10000:$0.2859 5000:$0.2889 2500:$0.2909
FDD3N50NZTM DISTI # FDD3N50NZTM	ON Semiconductor	Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FDD3N50NZTM) Min Qty: 863 Container: Bulk	Americas - 0	8630:$0.3579 4315:$0.3669 2589:$0.3709 1726:$0.3759 863:$0.3789
FDD3N50NZTM DISTI # FDD3N50NZTM	ON Semiconductor	Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) DPAK T/R (Alt: FDD3N50NZTM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2769 15000:€0.2979 10000:€0.3229 5000:€0.3519 2500:€0.4309
FDD3N50NZTM DISTI # 92R5521	ON Semiconductor	UF2 500V 2.5OHM DPAK / REEL	0	25000:$0.3350 10000:$0.3450 2500:$0.3570 1:$0.3600
FDD3N50NZTM DISTI # 512-FDD3N50NZTM	ON Semiconductor	MOSFET UNIFET2 500V RoHS: Compliant	4261	1:$0.8300 10:$0.6910 100:$0.4460 1000:$0.3570 2500:$0.3190
FDD3N50NZTM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	17500	1000:$0.3300 500:$0.3500 100:$0.3600 25:$0.3800 1:$0.4100
FDD3N50NZTM DISTI # 7396171P	ON Semiconductor	MOSFET N CHANNEL 500V 2.5A DPAK, RL	1055	25:£0.2420
FDD3N50NZTM DISTI # FDD3N50NZTM	ON Semiconductor	Transistor: N-MOSFET,unipolar,500V,2.5A,40W,DPAK	2414	500:$0.4700 100:$0.5100 25:$0.5600 5:$0.6400 1:$0.7100
FDD3N50NZTM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	2500

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FDD3N50NZTM

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes