IKW30N65H5XKSA1

Mfr. #:: IKW30N65H5XKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
Lifecycle:: New from this manufacturer.
Datasheet:: IKW30N65H5XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IKW30N65H5XKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Series:: TRENCHSTOP 5 H5

Packaging:: Tube

Height:: 20.7 mm

Length:: 15.87 mm

Width:: 5.31 mm

Brand:: Infineon Technologies

Product Type:: IGBT Transistors

Factory Pack Quantity:: 240

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IKW30N65H5 SP001204194

Unit Weight:: 0.213725 oz

Tags: IKW30N65H, IKW30N65, IKW30N6, IKW30N, IKW3, IKW

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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IKW30N65H5XKSA1 Description

***ical: Trans IGBT Chip N-CH 650V 55A 188000mW 3-Pin(3+Tab) TO-247 Tube

***ark: Igbt, Single, 650V, 55A, To-247; Dc Collector Current:55A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon SCT: High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO247-3, RoHS

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 650 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.65 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 188 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 650V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: NGTB35N65: 650 V 70 A 300 W Through Hole Field Stop II IGBT - TO-247-3

***nell: 650V/35A FAST IGBT FSII T; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***Yang: IKW30N65ES5: 650 V 30 A Through Hole High Speed 5 IGBT TrenchStop™ - PG-TO-247-3

***ark: Igbt, Single, 650V, 62A, To-247; Dc Collector Current:62A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:188W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon SCT: The 650 V, 30 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO-247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization, PG-TO247-3, RoHS

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 650 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.35 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 188 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. | Summary of Features: Very low V CE(sat) of 1.35V at 25C, 20% lower than TRENCHSTOP 5 H5; I C(n)=four times nominal current (100C T c); Soft current fall characteristics with no tail current; Symmetrical, low voltage overshoot; Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping; Maximum junction temperature T vj=175C; Qualified according to JEDEC standards | Benefits: V CE(peak) clamping circuits not required; Suitable for use with single turn-on / turn-off gate resistor; No need for gate clamping components; Gate drivers with Miller clamping not required; Reduction in the EMI filtering needed; Excellent for paralleling | Target Applications: Storage; UPS; Welding; Solar; Charger

***p One Stop: Trans IGBT Chip N-CH 650V 80A 274000mW 3-Pin(3+Tab) TO-247 Tube

***ark: Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:274W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon SCT: The 650 V, 50 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization, PG-TO247-3, RoHS

***ineon: TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. | Summary of Features: Very low V CE(sat) of 1.35V at 25C, 20% lower than TRENCHSTOP 5 H5; 4 times Ic pulse current (100C T c); Soft current fall characteristics with no tail current; Symmetrical, low voltage overshoot; Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping; Maximum junction temperature T vj=175C; Qualified according to JEDEC standards | Benefits: V CE(peak) clamping circuits not required; Suitable for use with single turn-on / turn-off gate resistor; No need for gate clamping components; Gate drivers with Miller clamping not required; Reduction in the EMI filtering needed; Excellent for paralleling | Target Applications: Storage; UPS; Welding; Solar; Charger

***ical: Trans IGBT Chip N-CH 650V 40A 150000mW 3-Pin(3+Tab) TO-247 Tube

***ark: Igbt, Single, 650V, 40A, To-247; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:150W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon SCT: Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS

***ineon: Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies

***ical: Trans IGBT Chip N-CH 600V 90A 300000mW 3-Pin(3+Tab) TO-247 Tube

*** Electronics: ON SEMICONDUCTOR NGTB45N60S1WG IGBT Single Transistor, 90 A, 2 V, 300 W, 600 V, TO-247, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AD

***nell: IGBT, SINGLE, 600V, 90A, TO-247-3;

***p One Stop: Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: 600 V, 20 A high speed trench gate field-stop IGBT

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247

*** Electronic Components: IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop

***(Formerly Allied Electronics): IGBT N-Ch 600V 20A High-Speed TO247

***ment14 APAC: IGBT, 600V, 40A, 175DEG C, 167W;

IKW30N65H5XKSA1 More Information

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

Home Appliance Solutions: Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More

TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs: Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.

Market price

Part #	Mfg.	Description	Stock	Price
IKW30N65H5XKSA1 DISTI # V99:2348_06377956	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 55A 188000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	200	1000:$1.7710 500:$2.0370 250:$2.2420 100:$2.3520 10:$2.6840 1:$3.1130
IKW30N65H5XKSA1 DISTI # V36:1790_06377956	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 55A 188000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
IKW30N65H5XKSA1 DISTI # IKW30N65H5XKSA1-ND	Infineon Technologies AG	IGBT TRENCH 650V 55A TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	422In Stock	1200:$2.3031 720:$2.6818 240:$3.1043 10:$3.7310 1:$4.1200
IKW30N65H5XKSA1 DISTI # 30332193	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 55A 188000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	200	1000:$1.9038 500:$2.1898 250:$2.4101 100:$2.5284 10:$2.8853 4:$3.3465
IKW30N65H5XKSA1 DISTI # IKW30N65H5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 55A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW30N65H5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	240:$1.8900 480:$1.8900 960:$1.7900 1440:$1.6900 2400:$1.6900
IKW30N65H5XKSA1 DISTI # SP001204194	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 55A 3-Pin TO-247 Tube (Alt: SP001204194) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.8900 10:€1.7900 25:€1.6900 50:€1.5900 100:€1.5900 500:€1.4900 1000:€1.3900
IKW30N65H5XKSA1 DISTI # IKW30N65H5	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 55A 3-Pin TO-247 Tube (Alt: IKW30N65H5) RoHS: Compliant Min Qty: 240 Container: Tube	Asia - 0
IKW30N65H5XKSA1 DISTI # 726-IKW30N65H5XKSA1	Infineon Technologies AG	IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e RoHS: Compliant	1072	1:$3.6800 10:$3.1300 100:$2.7100 250:$2.5700 500:$2.3100
IKW30N65H5XKSA1 DISTI # IKW30N65H5	Infineon Technologies AG	650V 55A 188W TO247 RoHS: Compliant	234	1:€5.5500 10:€2.5500 50:€1.5500 100:€1.4900
IKW30N65H5XKSA1 DISTI # 2781030	Infineon Technologies AG	IGBT, SINGLE, 650V, 55A, TO-247 RoHS: Compliant	46	500:£1.8200 250:£2.0200 100:£2.1300 10:£2.4600 1:£3.2300
IKW30N65H5XKSA1 DISTI # 2781030	Infineon Technologies AG	IGBT, SINGLE, 650V, 55A, TO-247 RoHS: Compliant	46	1000:$2.7900 500:$2.9300 250:$3.0900 100:$3.2700 10:$3.7000 1:$3.9500

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IKW30N65H5XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes