STW28N65M2

Mfr. #:: STW28N65M2
Manufacturer:: STMicroelectronics
Description:: MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package
Lifecycle:: New from this manufacturer.
Datasheet:: STW28N65M2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STW28N65M2 more Information STW28N65M2 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 20 A

Rds On - Drain-Source Resistance:: 180 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 35 nC

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 170 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: MDmesh

Packaging:: Tube

Series:: STW28N65M2

Transistor Type:: 1 N-Channel Power MOSFET

Brand:: STMicroelectronics

Fall Time:: 8.8 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 600

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 59 ns

Typical Turn-On Delay Time:: 13.4 ns

Unit Weight:: 1.340411 oz

Tags: STW28N6, STW28, STW2, STW

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STW28N65M2 Description

***icroelectronics: N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package

***ure Electronics: N-Channel 650 V 0.18 Ohm Flange Mount MDmesh M2 Power Mosfet - TO-247

***ark: Mosfet, N-Ch, 650V, 20A, 170W, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.15Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 20A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***roFlash: Single N-Channel 650 V 150 mOhm 86 nC CoolMOS¬ô Power Mosfet - TO-247-3

***ment14 APAC: MOSFET, N-CH, 650V, 22.4A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Source Voltage Vds:650V; On Resistance

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

***icroelectronics: N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-247 package

***ure Electronics: Single N-Channel 600 V 0.125 Ohm 45.5 nC 190 W Flange Mount Mosfet - TO-247-3

***ark: MOSFET, N-CH, 600V, 26A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***icroelectronics: N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-247 package

***ure Electronics: STW24N60M2 Series 650 V 0.19 Ohm 18 A N-Ch. MDmesh II Plus Low Qg Power Mosfet

***ark: MOSFET, N-CH, 600V, 18A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***ure Electronics: Single N-Channel 600 V 160 mOhm 44 nC CoolMOS Power Mosfet - TO-247-3

***et: Transistor MOSFET N-Channel 600V 23.8A 3-Pin TO-247 Tube

***nell: MOSFET, N-CH, 600V, 23.8A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 23.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.144ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

*** Stop Electro: Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***icroelectronics: N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package

***ark: Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***ure Electronics: N-Channel 600 V 16.8 A 230 mO 31 nC CoolMOS P6 Power Transistor - TO-247

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

STW28N65M2 More Information

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

MDmesh™ II Power MOSFETs: STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Market price

Part #	Mfg.	Description	Stock	Price
STW28N65M2 DISTI # 32894267	STMicroelectronics	Trans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	600	600:$1.4336
STW28N65M2 DISTI # 497-15575-5-ND	STMicroelectronics	MOSFET N-CH 650V 20A TO247 RoHS: Compliant Min Qty: 1 Container: Tube	973In Stock	5010:$1.4058 2520:$1.4607 510:$1.8232 120:$2.1417 30:$2.4713 10:$2.6140 1:$2.9100
STW28N65M2 DISTI # V36:1790_13796950	STMicroelectronics	Trans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0	600000:$1.2180 300000:$1.2210 60000:$1.4080 6000:$1.7270 600:$1.7800
STW28N65M2 DISTI # STW28N65M2	STMicroelectronics	Trans MOSFET N-CH 650V 20A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW28N65M2) RoHS: Not Compliant Min Qty: 600 Container: Tube	Americas - 372	6000:$1.3359 3000:$1.3638 1800:$1.4270 1200:$1.4943 600:$1.5682
STW28N65M2 DISTI # STW28N65M2	STMicroelectronics	Trans MOSFET N-CH 650V 20A 3-Pin TO-247 Tube (Alt: STW28N65M2) RoHS: Compliant Min Qty: 30 Container: Tube	Europe - 0	300:€1.1900 180:€1.2900 120:€1.3900 60:€1.4900 30:€1.8900
STW28N65M2 DISTI # 56Y1117	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$1.3600 250:$1.4100 100:$1.6800 50:$1.9400 25:$2.0600 10:$2.3600 1:$2.7200
STW28N65M2. DISTI # 24AC0055	STMicroelectronics	PTD HIGH VOLTAGE	372	6000:$1.3400 3000:$1.3700 1800:$1.4300 1200:$1.5000 1:$1.5700
STW28N65M2 DISTI # 511-STW28N65M2	STMicroelectronics	MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package RoHS: Compliant	6532	1:$2.7600 10:$2.3500 100:$2.0400 250:$1.9300 500:$1.7300 1000:$1.4600 2500:$1.3900 5000:$1.3300
STW28N65M2 DISTI # 3129973	STMicroelectronics	MOSFET, N-CH, 650V, 20A, 170W, TO-247 RoHS: Compliant	0	1000:$1.8700 500:$2.1400 250:$2.3200 100:$2.4400 10:$2.8400 1:$3.6100
STW28N65M2 DISTI # 3129973	STMicroelectronics	MOSFET, N-CH, 650V, 20A, 170W, TO-247	588	500:£1.2900 250:£1.4400 100:£1.5300 10:£1.7600 1:£2.3300

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STW28N65M2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes