BSZ0500NSIATMA1

Mfr. #:: BSZ0500NSIATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET LV POWER MOS
Lifecycle:: New from this manufacturer.
Datasheet:: BSZ0500NSIATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TSDSON-8

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 3.3 mm

Series:: OptiMOS 5

Width:: 3.3 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Part # Aliases:: BSZ0500NSI SP001288150

Tags: BSZ050, BSZ05, BSZ0, BSZ

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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Packaging Boxes

BSZ0500NSIATMA1 Description

***ure Electronics: BSZ0500NSI series 30V 40A 1.5 mOhm N-Ch S3O8 OptiMOS 5

***ineon SCT: With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse

***ure Electronics: Single N-Channel 25 V 1.3 mOhm 37 nC OptiMOS Power Mosfet - TSDSON-8 FL

***ineon SCT: With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse

***p One Stop: Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R

***ark: Mosfet, N Channel, 30V, 50A, To-252; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50A; On Resistance Rds(On):0.005Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 50 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 3 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 56

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: N-Channel PowerTrench® SyncFET™ 30V, 42A, 3mΩ

***r Electronics: Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***ical: Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R

*** Stop Electro: Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:68W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:68W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ

***ure Electronics: N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56

***rchild Semiconductor: The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***nell: MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V

***ark: MOSFET, P-CH, 30V, 50A, TO-252 ROHS COMPLIANT: YES

***et: P-CHANNEL 30-V (D-S) 175C MOSFET

***el Electronic: IC OPAMP GP 5.5MHZ RRO 8VSSOP

Market price

Part #	Mfg.	Description	Stock	Price
BSZ0500NSIATMA1 DISTI # V72:2272_13994217	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A T/R	4500	3000:$1.0005 1000:$1.0230 500:$1.1419 250:$1.2666 100:$1.3504 25:$1.5701 10:$1.6339 1:$2.0307
BSZ0500NSIATMA1 DISTI # V36:1790_13994217	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A T/R	0	5000000:$0.7159 2500000:$0.7162 500000:$0.7451 50000:$0.7975 5000:$0.8063
BSZ0500NSIATMA1 DISTI # BSZ0500NSIATMA1-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A 8SON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.8063
BSZ0500NSIATMA1 DISTI # 31962849	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A T/R	5000	5000:$0.7071
BSZ0500NSIATMA1 DISTI # 32133352	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A T/R	4500	8:$2.0337
BSZ0500NSIATMA1 DISTI # BSZ0500NSIATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 8SON - Tape and Reel (Alt: BSZ0500NSIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.7499 30000:$0.7639 20000:$0.7899 10000:$0.8199 5000:$0.8509
BSZ0500NSIATMA1 DISTI # SP001288150	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 8SON (Alt: SP001288150) RoHS: Compliant Min Qty: 5000	Europe - 0	50000:€0.6719 30000:€0.7239 20000:€0.7839 10000:€0.8549 5000:€1.0459
BSZ0500NSIATMA1 DISTI # 726-BSZ0500NSIATMA1	Infineon Technologies AG	MOSFET LV POWER MOS RoHS: Compliant	0	1:$1.7300 10:$1.4700 100:$1.1800 500:$1.0300 1000:$0.8570 2500:$0.7980 5000:$0.7680 10000:$0.7390

BSZ0500NSIATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes