STR2N2VH5

STR2N2VH5
Mfr. #:
STR2N2VH5
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 20V 0.025Ohm 23A STripFET V
Lifecycle:
New from this manufacturer.
Datasheet:
STR2N2VH5 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
STR2N2VH5 more Information STR2N2VH5 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
2.3 A
Rds On - Drain-Source Resistance:
30 mOhms
Vgs th - Gate-Source Threshold Voltage:
700 mV
Vgs - Gate-Source Voltage:
8 V
Qg - Gate Charge:
6 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
350 mW
Configuration:
Single
Tradename:
STripFET
Packaging:
Reel
Series:
STR2N2VH5
Transistor Type:
1 N-Channel
Brand:
STMicroelectronics
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Unit Weight:
0.000282 oz
Tags
STR2, STR
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 20 V, 0.025 Ohm typ., 2.3 A STripFET H5 Power MOSFET in SOT-23 package
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***et
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***ment14 APAC
MOSFET, N-CH, 20V, 2.3A, 0.35W, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Source Voltage Vds:20V; On Resistance
***nell
MOSFET, N-CH, 20V, 2.3A, 0.35W, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.3A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: STripFET H5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
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***ure Electronics
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***enic
20V 1.7A 500mW 70m¦¸@4.5V,1.7A 1.5V@250¦ÌA N Channel SOT-23-3 MOSFETs ROHS
***nell
MOSFET, N, 20V, 1.7A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Powe
***rchild Semiconductor
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
*** Electronics
VISHAY SI2302DDS-T1-GE3 MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V
***ure Electronics
SI2302DDS Series N-Channel 20 V 2.6 A 0.067 O 3.5 nC SMT Mosfet - SOT-23
***enic
20V 2.9A 57m´Î@4.5V3.6A 710mW 850mV@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ical
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; On Resistance Rds(On):0.045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:-; Product Range:-Rohs Compliant: No
***roFlash
Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***emi
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.4A, 52mΩ
***enic
20V 2.4A 500mW 52m¦¸@4.5V,2.4A 1.5V@250¦ÌA P Channel SOT-23-3 MOSFETs ROHS
***rchild Semiconductor
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:2.4A; On Resistance, Rds(on):0.052ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-3 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):52mohm; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:SOT-23 (TO-236); Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:304P; Termination Type:SMD; Voltage Vds:20V; Voltage Vgs th Max:-1.5V
***itex
Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23; AEC-Q100
***ure Electronics
Single N-Channel 20 V 57 mOhm 1.7 nC OptiMOS™ Small Signal Mosfet - SOT-23
***ow.cn
Trans MOSFET N-CH 20V 2.3A Automotive 3-Pin SOT-23 T/R
***el Electronic
20V 2.3A 57mΩ@2.5V,2.3A 500mW 750mV@11uA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ment14 APAC
MOSFET, N CH, 20V, 2.3A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Source Voltage Vds:20V; On Resistance
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 57 / Gate-Source Voltage V = 8 / Fall Time ns = 3.7 / Rise Time ns = 9.9 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 7.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
***emi
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***eco
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***Yang
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*** Source Electronics
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***enic
20V 2A 500mW 70m¦¸@4.5V,2A 1.5V@250¦ÌA P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***rchild Semiconductor
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications:load switching and power management, battery charging circuits, and DC/DC conversion.
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 110 / Gate-Source Voltage V = 8 / Fall Time ns = 20 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
***itex
Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.057ohm; 0.5W; -55+150 deg.C; SMD; SOT23; AEC-Q100
***ical
Trans MOSFET N-CH 20V 2.3A Automotive 3-Pin SOT-23 T/R
***ark
MOSFET, N-CH, 20V, 2.3A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.5V; Gate Source Threshold Voltage Max:550mV RoHS Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***nell
MOSFET, N-CH, 20V, 2.3A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.3A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.041ohm; Rds(on) Test Voltage Vgs: 2.5V; Threshold Voltage Vgs: 550mV; Power Dissipation Pd: 500mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 82 / Gate-Source Voltage V = 8 / Fall Time ns = 3.7 / Rise Time ns = 9.9 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 7.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 500
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STMicroelectronics STripFET V Power MOSFETs
STripFET V™ Power MOSFETs
STMicroelectronics STripFET V™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET™ technology with a new gate structure. The advanced planar technology is ideal for high efficiency, improving Figure of Merit (FoM). They exhibit the high current and low RDS(on) required by automotive and industrial switching applications. The advanced planar technology used in these devices are ideal for high efficiency, low voltage systems.
Part # Mfg. Description Stock Price
STR2N2VH5
DISTI # 31022444
STMicroelectronicsTrans MOSFET N-CH 20V 2.3A 3-Pin SOT-23 T/R
RoHS: Compliant
12000
  • 3000:$0.3055
STR2N2VH5
DISTI # 497-13883-1-ND
STMicroelectronicsMOSFET N-CH 20V 2.3A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3146In Stock
  • 1000:$0.6651
  • 500:$0.8425
  • 100:$1.0199
  • 10:$1.3080
  • 1:$1.4600
STR2N2VH5
DISTI # 497-13883-6-ND
STMicroelectronicsMOSFET N-CH 20V 2.3A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3146In Stock
  • 1000:$0.6651
  • 500:$0.8425
  • 100:$1.0199
  • 10:$1.3080
  • 1:$1.4600
STR2N2VH5
DISTI # 497-13883-2-ND
STMicroelectronicsMOSFET N-CH 20V 2.3A SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 15000:$0.5510
  • 6000:$0.5726
  • 3000:$0.6027
STR2N2VH5
DISTI # V36:1790_06565393
STMicroelectronicsTrans MOSFET N-CH 20V 2.3A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 3000000:$0.4776
  • 1500000:$0.4780
  • 300000:$0.5167
  • 30000:$0.5902
  • 3000:$0.6027
STR2N2VH5
DISTI # STR2N2VH5
STMicroelectronicsTrans MOSFET N-CH 20V 2.3A 3-Pin SOT-23 T/R (Alt: STR2N2VH5)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.0949
  • 18000:€0.1019
  • 12000:€0.1209
  • 6000:€0.1479
  • 3000:€0.1899
STR2N2VH5
DISTI # STR2N2VH5
STMicroelectronicsTrans MOSFET N-CH 20V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: STR2N2VH5)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.5229
  • 18000:$0.5339
  • 12000:$0.5589
  • 6000:$0.5849
  • 3000:$0.6139
STR2N2VH5
DISTI # 06X3735
STMicroelectronicsPTD LOW VOLTAGE0
  • 30000:$0.5210
  • 18000:$0.5330
  • 12000:$0.5540
  • 6000:$0.6150
  • 3000:$0.6770
  • 1:$0.7060
STR2N2VH5
DISTI # 07AH7113
STMicroelectronicsMOSFET, N-CH, 20V, 2.3A, 0.35W, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:2.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:700mV,Power RoHS Compliant: Yes0
  • 1000:$0.2130
  • 500:$0.2600
  • 250:$0.3270
  • 100:$0.3950
  • 50:$0.4840
  • 25:$0.5930
  • 10:$0.7310
  • 1:$0.9760
STR2N2VH5
DISTI # 511-STR2N2VH5
STMicroelectronicsMOSFET N-CH 20V 0.025Ohm 23A STripFET V
RoHS: Compliant
2393
  • 1:$1.3400
  • 10:$1.1400
  • 100:$0.8820
  • 500:$0.7800
  • 1000:$0.6150
  • 3000:$0.5460
  • 9000:$0.5250
STR2N2VH5
DISTI # 7917876P
STMicroelectronicsPOWER MOSFET N CH STRIPFET V 20V 2.3A, RL23660
  • 200:£0.6340
  • 100:£0.6470
STR2N2VH5
DISTI # TMOS1758
STMicroelectronicsN-CH 20V 2,3A 25mOhm@4,5V SOT23
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 3000:$0.1452
  • 6000:$0.1369
  • 9000:$0.1286
  • 15000:$0.1162
  • 18000:$0.1120
STR2N2VH5
DISTI # 3130138
STMicroelectronicsMOSFET, N-CH, 20V, 2.3A, 0.35W, SOT-238850
  • 500:£0.5830
  • 250:£0.6210
  • 100:£0.6590
  • 25:£0.8530
  • 5:£0.9420
STR2N2VH5
DISTI # 3130138
STMicroelectronicsMOSFET, N-CH, 20V, 2.3A, 0.35W, SOT-23
RoHS: Compliant
9000
  • 5000:$0.6900
  • 1000:$0.7200
  • 500:$1.0200
  • 250:$1.0800
  • 100:$1.1500
  • 25:$1.4900
  • 5:$1.6400
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of STR2N2VH5 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.34
$1.34
10
$1.14
$11.40
100
$0.88
$88.20
500
$0.78
$390.00
1000
$0.62
$615.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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