SISA18ADN-T1-GE3

SISA18ADN-T1-GE3
Mfr. #:
SISA18ADN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Lifecycle:
New from this manufacturer.
Datasheet:
SISA18ADN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SISA18ADN-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-1212-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
38.3 A
Rds On - Drain-Source Resistance:
6 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V, - 16 V
Qg - Gate Charge:
21.5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
19.8 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Height:
1.04 mm
Length:
3.3 mm
Series:
SIS
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
54 S
Fall Time:
7 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
15 ns
Typical Turn-On Delay Time:
15 ns
Tags
SISA18, SISA1, SISA, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R
***ure Electronics
MOSFET 30V 7.5MOHM@10V 18A N-CH G-IV
***nsix Microsemi
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, 30V, 38.3A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:38.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:19.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited
***mal
N-Ch PowerPAK1212 BWL 30V 7.5mohm@10V
***(Formerly Allied Electronics)
SIRA18DP-T1-GE3 N-channel MOSFET Transistor; 15.5 A; 30 V; 8-Pin PowerPAK SO
***ure Electronics
Single N-Channel 30 V 15.5 A 3.3 W Surface Mount Mosfet - POWERPAK-SO-8
***nell
MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
***et Europe
Trans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R
***ark
N-Ch PowerPAK1212-8-Thin BWL 30V Gen4 7.5/12 mohm@10V/4.5V
*** Electronics
MOSFET 30V 7.5mOhm@10V 38.3A N-Ch G-IV
***icontronic
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 30V 16.5A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 30V 40A PPAK SO-8
*** Electronics
MOSFET 30V 6.7mOhm@10V 40A N-Ch G-IV
***ark
N-CHANNEL 30-V (D-S) MOSFET
***emi
PowerTrench® MOSFET, N-Channel, 30V, 40A, 15mΩ
***ure Electronics
FDD8878 Series 30 V 11 A 15 mOhm SMT N-Ch PowerTrench® MOSFET - TO-252AA
***r Electronics
Power Field-Effect Transistor, 36A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***emi
Single N-Channel Power MOSFET 30V, 47A, 7.4mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks
*** Stop Electro
Power Field-Effect Transistor, 47A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 30V 15.3A Automotive 8-Pin WDFN EP T/R
***i-Key
MOSFET N-CH 30V 15.3A/47A 8WDFN
***enic
30V 47A 5.9m´Î@10V30A 28W 2.2V@250uA 163pF@15V N Channel 993pF@15V 10.1nC@4.5V -55¡Í~+175¡Í@(Tj) WDFN-8 MOSFETs ROHS
***emi
Single N−Channel Power MOSFET 30 V, 46 A, 6.95mΩ
***et
Trans MOSFET N-CH 30V 15A 8-Pin SO-FL T/R
***ark
TRENCH 6 30V NCH / REEL ROHS COMPLIANT: YES
***enic
30V 46A 5.8m´Î@10V30A 23.6W 2.2V@250uA 162pF@15V N Channel 987pF@15V 9.7nC@4.5V -55¡Í~+150¡Í@(Tj) SO-8FL MOSFETs ROHS
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SISA18ADN-T1-GE3
DISTI # V72:2272_09216153
Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
1077
  • 1000:$0.2320
  • 500:$0.2922
  • 250:$0.3632
  • 100:$0.3733
  • 25:$0.4616
  • 10:$0.5502
  • 1:$0.7141
SISA18ADN-T1-GE3
DISTI # V36:1790_09216153
Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
0
  • 3000000:$0.1909
  • 1500000:$0.1911
  • 300000:$0.2039
  • 30000:$0.2245
  • 3000:$0.2279
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 38.3A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
17280In Stock
  • 1000:$0.2574
  • 500:$0.3331
  • 100:$0.4239
  • 10:$0.5680
  • 1:$0.6600
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 38.3A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
17280In Stock
  • 1000:$0.2574
  • 500:$0.3331
  • 100:$0.4239
  • 10:$0.5680
  • 1:$0.6600
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 38.3A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
15000In Stock
  • 30000:$0.1882
  • 15000:$0.1984
  • 6000:$0.2132
  • 3000:$0.2278
SISA18ADN-T1-GE3
DISTI # 33921352
Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
1077
  • 1000:$0.2320
  • 500:$0.2922
  • 250:$0.3632
  • 100:$0.3733
  • 36:$0.4616
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R (Alt: SISA18ADN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SISA18ADN-T1-GE3
    DISTI # SISA18ADN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R (Alt: SISA18ADN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.1699
    • 18000:€0.1819
    • 12000:€0.1969
    • 6000:€0.2289
    • 3000:€0.3359
    SISA18ADN-T1-GE3
    DISTI # SISA18ADN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA18ADN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
      SISA18ADN-T1-GE3
      DISTI # 19X1956
      Vishay IntertechnologiesMOSFET Transistor, N Channel, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V RoHS Compliant: Yes2850
      • 1000:$0.2410
      • 500:$0.3120
      • 250:$0.3460
      • 100:$0.3800
      • 50:$0.4240
      • 25:$0.4670
      • 10:$0.5110
      • 1:$0.6670
      SISA18ADN-T1-GE3
      DISTI # 99W9573
      Vishay IntertechnologiesMOSFET Transistor, N Channel, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V0
      • 50000:$0.1810
      • 30000:$0.1890
      • 20000:$0.2030
      • 10000:$0.2170
      • 5000:$0.2360
      • 1:$0.2410
      SISA18ADN-T1-GE3
      DISTI # 78-SISA18ADN-T1-GE3
      Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
      RoHS: Compliant
      7926
      • 1:$0.6600
      • 10:$0.5060
      • 100:$0.3760
      • 500:$0.3090
      • 1000:$0.2390
      SISA18ADNT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      2915
        SISA18ADN-T1-GE3
        DISTI # 2364101
        Vishay IntertechnologiesMOSFET, N-CH, 30V, 38.3A, PPAK1212-8
        RoHS: Compliant
        2350
        • 3000:$0.3610
        • 1000:$0.3680
        • 500:$0.4760
        • 100:$0.5790
        • 10:$0.7790
        • 1:$1.0200
        SISA18ADN-T1-GE3
        DISTI # 2364101
        Vishay IntertechnologiesMOSFET, N-CH, 30V, 38.3A, PPAK1212-82475
        • 500:£0.2410
        • 250:£0.2670
        • 100:£0.2930
        • 25:£0.4150
        • 5:£0.4460
        SISA18ADN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8Americas - 3000
        • 3000:$0.1980
        • 6000:$0.1920
        • 12000:$0.1880
        • 18000:$0.1850
        Image Part # Description
        LT1677CS8#PBF

        Mfr.#: LT1677CS8#PBF

        OMO.#: OMO-LT1677CS8-PBF

        Precision Amplifiers L N, R2R Prec Op Amp
        TCAN330GDR

        Mfr.#: TCAN330GDR

        OMO.#: OMO-TCAN330GDR

        CAN Interface IC TCAN330G
        SN74LVC3G34DCUR

        Mfr.#: SN74LVC3G34DCUR

        OMO.#: OMO-SN74LVC3G34DCUR

        Buffers & Line Drivers Triple
        IRLML6244TRPBF

        Mfr.#: IRLML6244TRPBF

        OMO.#: OMO-IRLML6244TRPBF

        MOSFET MOSFT 20V 6.3A 21mOhm 2.5V cpbl
        CSD17308Q3

        Mfr.#: CSD17308Q3

        OMO.#: OMO-CSD17308Q3

        MOSFET 30V NCh NexFET Pwr MOSFET
        STM32F407IET6

        Mfr.#: STM32F407IET6

        OMO.#: OMO-STM32F407IET6

        ARM Microcontrollers - MCU ARM M4 512 FLASH 168 Mhz 192kB SRAM
        0686F0500-01

        Mfr.#: 0686F0500-01

        OMO.#: OMO-0686F0500-01

        Surface Mount Fuses Fuse, Surface Mount 0.5A, 0603 Size
        IRLML6244TRPBF

        Mfr.#: IRLML6244TRPBF

        OMO.#: OMO-IRLML6244TRPBF-INFINEON-TECHNOLOGIES

        New and Original
        S24SP24003PDFA

        Mfr.#: S24SP24003PDFA

        OMO.#: OMO-S24SP24003PDFA-DELTA-PRODUCT-GROUPS

        Isolated DC/DC Converters DC/DC Converter, 60W SingleOutput +24Vout
        TCAN330GDR

        Mfr.#: TCAN330GDR

        OMO.#: OMO-TCAN330GDR-TEXAS-INSTRUMENTS

        CAN Interface IC 3.3-V CAN Transceivers with CAN FD (Flexible Data Rate) 8-SOIC -40 to 125
        Availability
        Stock:
        Available
        On Order:
        1990
        Enter Quantity:
        Current price of SISA18ADN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $0.66
        $0.66
        10
        $0.51
        $5.06
        100
        $0.38
        $37.60
        500
        $0.31
        $154.50
        1000
        $0.24
        $239.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
        Start with
        Newest Products
        • -12 V and -20 V P-Channel Gen III MOSFETs
          Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
        • DG2788A Dual DPDT / Quad SPDT Analog Switch
          Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
        • Compare SISA18ADN-T1-GE3
          SISA18ADNT1GE3 vs SISA18DNT1GE3 vs SISA18JNT1GE3
        • Smart Load Switches
          Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
        • SUM70101EL 100 V P-Channel MOSFET
          Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
        • DGQ2788A AEC-Q100 Qualified Analog Switch
          The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
        Top