SISA

SISA01DN-T1-GE3 vs SISA04DN-T1-GE3 vs SISA10DN-T1-GE3

 
PartNumberSISA01DN-T1-GE3SISA04DN-T1-GE3SISA10DN-T1-GE3
DescriptionMOSFET -30V Vds 16V Vgs PowerPAK 1212-8MOSFET 30V Vds 20V Vgs PowerPAK 1212-8MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYEE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-1212-8PowerPAK-1212-8PowerPAK-1212-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current60 A40 A30 A
Rds On Drain Source Resistance4.9 mOhms1.8 mOhms2.8 mOhms
Vgs th Gate Source Threshold Voltage2.2 V1.1 V1.1 V
Vgs Gate Source Voltage16 V, - 20 V20 V, - 16 V20 V, - 16 V
Qg Gate Charge56 nC77 nC51 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation52 W52 W39 W
ConfigurationSingleSingleSingle
TradenameTrenchFET, PowerPAKTrenchFETTrenchFET, PowerPAK
PackagingReelReelReel
SeriesSISSISSIS
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time10 ns10 ns10 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time6 ns17 ns10 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time39 ns25 ns27 ns
Typical Turn On Delay Time15 ns24 ns10 ns
Channel Mode-EnhancementEnhancement
Transistor Type-1 N-Channel1 N-Channel
Forward Transconductance Min-105 S52 S
Part # Aliases-SISA04DN-GE3SISA10DN-GE3
Height--1.04 mm
Length--3.3 mm
Width--3.3 mm
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SISA01DN-T1-GE3 MOSFET -30V Vds 16V Vgs PowerPAK 1212-8
SiSA26DN-T1-GE3 MOSFET 25V Vds 16V Vgs PowerPAK 1212-8
SISA18ADN-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
SISA12ADN-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
SISA04DN-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
SISA14DN-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
SISA10DN-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
SISA88DN-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
SISA72DN-T1-GE3 MOSFET 40V Vds 20V Vgs PowerPAK 1212-8
SISA40DN-T1-GE3 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
SISA72ADN-T1-GE3 MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8
SISA16DN-T1-GE3 MOSFET N-Ch PowerPAK1212
SISA66DN-T1-GE3 MOSFET 30V Vds TrenchFET PowerPAK 1212-8
SISA34DN-T1-GE3 MOSFET RECOMMENDED ALT 78-SISA18ADN-T1-GE3
SISA96DN-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Vishay
Vishay
SISA88DN-T1-GE3 MOSFET N-CH 30V 1212-8 PPAK
SISA01DN-T1-GE3 MOSFET P-CH 30V POWERPAK 1212-8
SISA04DN-T1-GE3 MOSFET N-CH 30V 40A 1212-8
SISA10DN-T1-GE3 MOSFET N-CH 30V 30A 1212-8
SISA14DN-T1-GE3 MOSFET N-CH 30V 20A 1212-8
SISA16DN-T1-GE3 MOSFET N-CH 30V D-S PPAK 1212-8
SISA18DN-T1-GE3 MOSFET N-CH 30V 38.3A 1212-8
SISA24DN-T1-GE3 MOSFET N-CH 25V 60A POWERPAK1212
SISA66DN-T1-GE3 MOSFET N-CH 30V 40A POWERPAK1212
SISA72DN-T1-GE3 MOSFET N-CH 40V 60A POWERPAK1212
SISA96DN-T1-GE3 MOSFET N-CH 30V 16A POWERPAK1212
SISA12ADN-T1-GE3 MOSFET N-CH 30V 25A 1212-8
SISA18ADN-T1-GE3 MOSFET N-CH 30V 38.3A 1212-8
SISA26DN-T1-GE3 N-Channel 25 V (D-S) MOSFET
SISA34DN-T1-GE3 N-Channel 30 V (D-S) MOSFET
SISA40DN-T1-GE3 N-Channel 20-V (D-S) MOSFET PowerPAK 1212-8 1G SG DUV 2 mil , 1.1 m @ 10V m @ 7.5V 1.45 m @ 4.5V
SISA72ADN-T1-GE3 N-Channel 40-V (D-S) MOSFET PowerPAK 1212-8 650M SG 2 mil , 3.25 m @ 10V m @ 7.5V 4.66 m @ 4.5V
SISA04DNT1GE3 New and Original
SISA10DN New and Original
SISA10DN-T1 New and Original
SISA10DN-T1-E3 New and Original
SISA12ADN New and Original
SISA12ADN-T1-GT3 New and Original
SISA12DN-T1-GE3 Semiconcuctor, Mosfet, TrenchFET, N-Channel, 30V, 25A, 4.3mohm @ 10V, PowerPAK 1212-8
SISA12JN-T1-GE3 New and Original
SISA18ADNT1GE3 Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SISA18JN-T1-GE3 New and Original
SISA72DN New and Original
SISAS2208-1 New and Original
SISAS2X36 New and Original
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