SISA12ADN-T1-GE3

Mfr. #:: SISA12ADN-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Lifecycle:: New from this manufacturer.
Datasheet:: SISA12ADN-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SISA12ADN-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-1212-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 25 A

Rds On - Drain-Source Resistance:: 3.2 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.1 V

Vgs - Gate-Source Voltage:: 20 V, - 16 V

Qg - Gate Charge:: 45 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 28 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET, PowerPAK

Packaging:: Reel

Series:: SIS

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 51 S

Fall Time:: 10 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 25 ns

Typical Turn-On Delay Time:: 10 ns

Tags: SISA12A, SISA12, SISA1, SISA, SIS

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISA12ADN-T1-GE3 Description

***et: Trans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 T/R

***ure Electronics: MOSFET For New Design See: 78-SISHA12ADN-T1-GE3

***nell: MOSFET, N-CH, 30V, 25A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:28W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited

***S: French Electronic Distributor since 1988

***(Formerly Allied Electronics): Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 30A; 3.7mohm @ 10V; PowerPAK 1212-8

***et: Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212 T/R

***ment14 APAC: MOSFET, N CHANNEL, 30V, 30A, POWERPAK 12

***el Electronic: MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV

***S: French Electronic Distributor since 1988

***ure Electronics: Single N-Channel 30 V 4.3 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8

***(Formerly Allied Electronics): Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 25A; 4.3mohm @ 10V; PowerPAK SO-8

***ark: N-Ch Powerpakso-8 Bwl 30V Gen4 4.3/6.0 Mohm@10V/4.5V Rohs Compliant: Yes

***enic: 30V 25A 31W 4.3m´Î@10V10A 2.2V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS

*** Electronics: MOSFET 30V 4.3mOhm@10V 25A N-Ch G-IV

***(Formerly Allied Electronics): Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 30A; 3.7mohm @ 10V; PowerPAK SO-8

***ure Electronics: N-Channel 30 V 60 A 5 W 3.7 mOhm Surface Mount Power Mosfet - PowerPAK® SO-8

***ark: MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:40W; Operating Temperature;RoHS Compliant: Yes

***ure Electronics: N-Channel 30 V 3.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,21A I(D),SO

***et: Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm;

***rchild Semiconductor: The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

***nell: MOSFET, N, SMD, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 2.5mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 21A; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 106A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.045Ohm;ID 23A;D-Pak (TO-252AA);PD 45W

***ark: Mosfet Transistor, N Channel, 22 A, 30 V, 45 Mohm, 10 V, 1 V

***ure Electronics: Single N-Channel 30 V 0.065 Ohm 15 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***SIT Distribution GmbH: Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***nell: MOSFET, N, 30V, 22A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Diss

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package

***et: Trans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R

***(Formerly Allied Electronics): MOSFET N-Channel 30V 8.7A HEXFET PQFN6EP

***nell: MOSFET,W DIODE,N CH,30V,8.7A,PQFN22; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:12V

SISA12ADN-T1-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

Part #	Mfg.	Description	Stock	Price
SISA12ADN-T1-GE3 DISTI # V72:2272_09216151	Vishay Intertechnologies	Trans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 EP T/R	30	25:$0.5657 10:$0.5677 1:$0.6674
SISA12ADN-T1-GE3 DISTI # SISA12ADN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 25A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3078In Stock	1000:$0.3988 500:$0.4985 100:$0.6730 10:$0.8720 1:$1.0000
SISA12ADN-T1-GE3 DISTI # SISA12ADN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 25A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3078In Stock	1000:$0.3988 500:$0.4985 100:$0.6730 10:$0.8720 1:$1.0000
SISA12ADN-T1-GE3 DISTI # SISA12ADN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 25A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.3509
SISA12ADN-T1-GE3 DISTI # C1S803602308767	Vishay Intertechnologies	MOSFETs RoHS: Not Compliant	30	25:$0.5657 10:$0.5677
SISA12ADN-T1-GE3 DISTI # 25789971	Vishay Intertechnologies	Trans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 EP T/R	30	23:$0.6674
SISA12ADN-T1-GE3 DISTI # SISA12ADN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA12ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3199 6000:$0.3099 12000:$0.2979 18000:$0.2889 30000:$0.2819
SISA12ADN-T1-GE3 DISTI # SISA12ADN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 T/R (Alt: SISA12ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.5289 6000:€0.3609 12000:€0.3099 18000:€0.2869 30000:€0.2669
SISA12ADN-T1-GE3 DISTI # SISA12ADN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 T/R (Alt: SISA12ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SISA12ADN-T1-GE3 DISTI # 19X1955	Vishay Intertechnologies	MOSFET Transistor, N Channel, 25 A, 30 V, 0.0032 ohm, 10 V, 1.1 V , RoHS Compliant: Yes	8997	1:$0.8800 10:$0.7020 25:$0.6460 50:$0.5890 100:$0.5330 500:$0.4400 1000:$0.3520
SISA12ADN-T1-GE3 DISTI # 78-SISA12ADN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	7168	1:$0.8800 10:$0.7020 100:$0.5330 500:$0.4400 1000:$0.3520 3000:$0.3190
SISA12ADN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8	Americas -	3000:$0.3100 6000:$0.2930 12000:$0.2840 24000:$0.2800
SISA12ADN-T1-GE3 DISTI # 2364100	Vishay Intertechnologies	MOSFET, N-CH, 30V, 25A, PPAK1212-8 RoHS: Compliant	8997	1:$1.4000 10:$1.1200 100:$0.8440 500:$0.6970 1000:$0.5570 3000:$0.5060
SISA12ADN-T1-GE3 DISTI # 2364100	Vishay Intertechnologies	MOSFET, N-CH, 30V, 25A, PPAK1212-8 RoHS: Compliant	8997	5:£0.6020 25:£0.5450 100:£0.4070 250:£0.3720 500:£0.3360

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Availability

Stock:: 11
On Order:: 1994
Enter Quantity:

Current price of SISA12ADN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.87~~; ~~$0.87~~

10: ~~$0.70~~; ~~$7.01~~

100: ~~$0.53~~; ~~$53.20~~

500: ~~$0.44~~; ~~$220.00~~

1000: ~~$0.35~~; ~~$352.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SISA12ADN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes