SISA04DN-T1-GE3

SISA04DN-T1-GE3
Mfr. #:
SISA04DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Lifecycle:
New from this manufacturer.
Datasheet:
SISA04DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SISA04DN-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-1212-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
1.8 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
20 V, - 16 V
Qg - Gate Charge:
77 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
52 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SIS
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
105 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
17 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
25 ns
Typical Turn-On Delay Time:
24 ns
Part # Aliases:
SISA04DN-GE3
Tags
SISA0, SISA, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Cu
***ied Electronics & Automation
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK 1212-8
***nell
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
SiSA04DN N-Channel MOSFET
Vishay Siliconix's SiSA04DN N-Channel 30V (D-S) MOSFET is a TrenchFET® Gen IV Power MOSFET that is 100% Rg and UIS tested. In addition, the SiSA04DN N-Channel MOSFET from Vishay Siliconix is halogen-free according to IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC. Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SISA04DN-T1-GE3
DISTI # V72:2272_09216115
Vishay IntertechnologiesTrans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
3000
  • 3000:$0.5387
  • 1000:$0.5430
  • 500:$0.5951
  • 250:$0.6992
  • 100:$0.7010
  • 25:$0.8613
  • 10:$0.8649
  • 1:$0.9983
SISA04DN-T1-GE3
DISTI # SISA04DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 40A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6276In Stock
  • 1000:$0.6118
  • 500:$0.7750
  • 100:$0.9993
  • 10:$1.2640
  • 1:$1.4300
SISA04DN-T1-GE3
DISTI # SISA04DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 40A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6276In Stock
  • 1000:$0.6118
  • 500:$0.7750
  • 100:$0.9993
  • 10:$1.2640
  • 1:$1.4300
SISA04DN-T1-GE3
DISTI # SISA04DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 40A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 3000:$0.5544
SISA04DN-T1-GE3
DISTI # 31011007
Vishay IntertechnologiesTrans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
3000
  • 3000:$0.5387
  • 1000:$0.5430
  • 500:$0.5951
  • 250:$0.6992
  • 100:$0.7010
  • 25:$0.8613
  • 14:$0.8649
SISA04DN-T1-GE3
DISTI # SISA04DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R (Alt: SISA04DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SISA04DN-T1-GE3
    DISTI # SISA04DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R (Alt: SISA04DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€0.8649
    • 6000:€0.6209
    • 12000:€0.5029
    • 18000:€0.4449
    • 30000:€0.4259
    SISA04DN-T1-GE3
    DISTI # SISA04DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA04DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.5239
    • 6000:$0.5079
    • 12000:$0.4869
    • 18000:$0.4739
    • 30000:$0.4609
    SISA04DN-T1-GE3
    DISTI # 05W5778
    Vishay IntertechnologiesMOSFET, 30V, 40A, PPAK1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0018ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:52W,No. of Pins:8 , RoHS Compliant: Yes2060
    • 1:$1.2600
    • 10:$1.0400
    • 25:$0.9590
    • 50:$0.8770
    • 100:$0.7960
    • 500:$0.6850
    • 1000:$0.6000
    SISA04DN-T1-GE3
    DISTI # 70243889
    Vishay SiliconixSemiconcuctor,Mosfet,TrenchFET,N-Channel,30V,40A,2.15mohm @ 10V,PowerPAK 1212-8
    RoHS: Compliant
    0
    • 3000:$0.4960
    SISA04DN-T1-GE3
    DISTI # 78-SISA04DN-T1-GE3
    Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant
    2556
    • 1:$1.2600
    • 10:$1.0400
    • 100:$0.7960
    • 500:$0.6850
    • 1000:$0.5400
    • 3000:$0.5040
    SISA04DN-T1-GE3
    DISTI # 7689307P
    Vishay IntertechnologiesMOSFET N-CH 30V 30.9A POWERPAK 1212-8, RL1618
    • 20:£0.3500
    SISA04DN-T1-GE3
    DISTI # C1S803601730905
    Vishay IntertechnologiesMOSFETs
    RoHS: Compliant
    3000
    • 250:$0.6992
    • 100:$0.7012
    • 25:$0.8613
    • 10:$0.8649
    SISA04DN-T1-GE3
    DISTI # 2114704
    Vishay IntertechnologiesMOSFET, 30V, 40A, PPAK1212-8
    RoHS: Compliant
    2128
    • 1:$2.0000
    • 10:$1.6500
    • 100:$1.2600
    • 500:$1.0900
    • 1000:$0.9500
    • 3000:$0.9500
    SISA04DN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8Americas - 18000
    • 3000:$0.5040
    • 6000:$0.4760
    • 12000:$0.4620
    • 24000:$0.4550
    SISA04DN-T1-GE3
    DISTI # 2114704
    Vishay IntertechnologiesMOSFET, 30V, 40A, PPAK1212-8
    RoHS: Compliant
    2610
    • 5:£0.3570
    • 25:£0.3500
    • 100:£0.3430
    • 250:£0.3360
    • 500:£0.3280
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    Mfr.#: BSS138LT1G

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    OMO.#: OMO-LT3062EDCB-TRMPBF

    LDO Voltage Regulators 45V Vin, Micropower, Low Noise, 200mA LDO with Output Discharge
    SISA96DN-T1-GE3

    Mfr.#: SISA96DN-T1-GE3

    OMO.#: OMO-SISA96DN-T1-GE3

    MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    ERJ-2RKF4701X

    Mfr.#: ERJ-2RKF4701X

    OMO.#: OMO-ERJ-2RKF4701X

    Thick Film Resistors - SMD 0402 4.7Kohms 1% AEC-Q200
    IHLP2525BDER1R0M01

    Mfr.#: IHLP2525BDER1R0M01

    OMO.#: OMO-IHLP2525BDER1R0M01

    Fixed Inductors 1uH 20%
    IHLP2525BDER1R0M01

    Mfr.#: IHLP2525BDER1R0M01

    OMO.#: OMO-IHLP2525BDER1R0M01-VISHAY-DALE

    Fixed Inductors 1uH 20%
    SML-LX0402SUGC-TR

    Mfr.#: SML-LX0402SUGC-TR

    OMO.#: OMO-SML-LX0402SUGC-TR-LUMEX

    Standard LEDs - SMD Green Water Clear 574nm 45mcd
    SISA96DN-T1-GE3

    Mfr.#: SISA96DN-T1-GE3

    OMO.#: OMO-SISA96DN-T1-GE3-VISHAY

    MOSFET N-CH 30V 16A POWERPAK1212
    BSS138LT1G

    Mfr.#: BSS138LT1G

    OMO.#: OMO-BSS138LT1G-ON-SEMICONDUCTOR

    MOSFET N-CH 50V 200MA SOT-23
    Availability
    Stock:
    Available
    On Order:
    1988
    Enter Quantity:
    Current price of SISA04DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.25
    $1.25
    10
    $1.03
    $10.30
    100
    $0.80
    $79.50
    500
    $0.68
    $342.00
    1000
    $0.54
    $539.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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