PartNumber | SISA01DN-T1-GE3 | SISA04DN-T1-GE3 |
Description | MOSFET -30V Vds 16V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | Y | E |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V |
Id Continuous Drain Current | 60 A | 40 A |
Rds On Drain Source Resistance | 4.9 mOhms | 1.8 mOhms |
Vgs th Gate Source Threshold Voltage | 2.2 V | 1.1 V |
Vgs Gate Source Voltage | 16 V, - 20 V | 20 V, - 16 V |
Qg Gate Charge | 56 nC | 77 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 52 W | 52 W |
Configuration | Single | Single |
Tradename | TrenchFET, PowerPAK | TrenchFET |
Packaging | Reel | Reel |
Series | SIS | SIS |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 10 ns | 10 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 6 ns | 17 ns |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 39 ns | 25 ns |
Typical Turn On Delay Time | 15 ns | 24 ns |
Channel Mode | - | Enhancement |
Transistor Type | - | 1 N-Channel |
Forward Transconductance Min | - | 105 S |
Part # Aliases | - | SISA04DN-GE3 |