STU8N80K5

Mfr. #:: STU8N80K5
Manufacturer:: STMicroelectronics
Description:: MOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected
Lifecycle:: New from this manufacturer.
Datasheet:: STU8N80K5 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STU8N80K5 more Information STU8N80K5 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-251-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 800 V

Id - Continuous Drain Current:: 6 A

Rds On - Drain-Source Resistance:: 950 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 16.5 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 110 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: SuperMESH

Packaging:: Tube

Series:: STU8N80K5

Transistor Type:: 1 N-Channel

Brand:: STMicroelectronics

Fall Time:: 20 ns

Product Type:: MOSFET

Rise Time:: 14 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 32 ns

Typical Turn-On Delay Time:: 12 ns

Unit Weight:: 0.139332 oz

Tags: STU8N, STU8, STU

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STU8N80K5 Description

***icroelectronics: N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in IPAK package

***ure Electronics: N-Channel 800 V 6 A 950 mOhm Through Hole SuperMESH 5 Power Mosfet - TO-220

***r Electronics: Power Field-Effect Transistor, 6A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***icroelectronics: N-channel 800 V, 0.95 Ohm typ., 6 A MDmesh K5 Power MOSFET in IPAK package

***r Electronics: Power Field-Effect Transistor, 6A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***enic: 800V 6A 950m´Î@10V3A 110W 4V@100uA 1pF@100V N Channel 360pF@100V 13.4nC@0~10V -55¡Í~+150¡Í@(Tj) TO-251-3(IPAK) MOSFETs ROHS

***ical: Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube

***ronik: N-CH 800V 5,7A 950mOhm TO251-3

*** Electronics: COOLMOS N-CHANNEL POWER MOSFET

***ineon SCT: 800V CoolMOS™ CE is Infineon’s high performance device family offering 800 volts break down voltage, PG-TO251-3, RoHS

***ineon: 800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting

***icroelectronics: N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package

***ark: Power Mosfet, N Channel, 7 A, 650 V, 0.6 Ohm, 10 V, 3 V Rohs Compliant: Yes

*** Electronics: STMICROELECTRONICS STU11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V

***nell: MOSFET, N CHANNEL, 650V, 7A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P

***ical: Trans MOSFET N-CH 700V 7.4A 3-Pin(3+Tab) TO-251 Tube

***ark: Mosfet, N-Ch, 700V, 7.4A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:7.4A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers

***emi: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK

***nell: MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package

***ure Electronics: N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK

***r Electronics: Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

STU8N80K5 More Information

MDmesh K5 Power MOSFETs: STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies and welding. The K5 series are available at 800V, 850V, 900V, 950V, 1050V, 1200V and 1500V.

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

STMicroelectronics SuperMESH High Voltage MOSFETs - Thru-Hole

Market price

Part #	Mfg.	Description	Stock	Price
STU8N80K5 DISTI # 497-13658-5-ND	STMicroelectronics	MOSFET N CH 800V 6A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	28In Stock	2550:$1.8060 525:$2.2485 150:$2.6413 75:$3.0476 10:$3.2240 1:$3.5900
STU8N80K5 DISTI # STU8N80K5	STMicroelectronics	Trans MOSFET N-CH 800V 6A 3-Pin TO-251 Tube - Rail/Tube (Alt: STU8N80K5) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	18000:$1.5900 30000:$1.5900 12000:$1.6900 6000:$1.7900 3000:$1.8900
STU8N80K5 DISTI # 89W1525	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$1.6800 250:$1.7300 100:$2.0700 50:$2.3900 25:$2.5500 10:$2.9100 1:$3.3600
STU8N80K5 DISTI # 511-STU8N80K5	STMicroelectronics	MOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected RoHS: Compliant	0	1:$3.4200 10:$2.9100 100:$2.5200 250:$2.3900 500:$2.1500 1000:$1.8100 3000:$1.7200
STU8N80K5 DISTI # 7917958P	STMicroelectronics	POWER MOSFET N CH SUPERMESH 5 800V 6A, TU	2800	25:£0.6380
STU8N80K5 DISTI # 7917958	STMicroelectronics	POWER MOSFET N CH SUPERMESH 5 800V 6A, PK	200	25:£0.6380 5:£0.6540

Image	Part #	Description
	Mfr.#: STRVS185X02B OMO.#: OMO-STRVS185X02B	TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 185V Ipp 2A
	Mfr.#: STRVS280X02F OMO.#: OMO-STRVS280X02F	TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
	Mfr.#: STRVS185X02B OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS	TVS DIODE 128V 185V SMB
	Mfr.#: STRVS280X02F OMO.#: OMO-STRVS280X02F-STMICROELECTRONICS	TVS Diodes - Transient Voltage Suppressors Rep Volt Suppressor TVS 280V Ipp 2A

STU8N80K5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes