SIR836DP-T1-GE3

Mfr. #:: SIR836DP-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CH 40V 21A PPAK SO-8
Lifecycle:: New from this manufacturer.
Datasheet:: SIR836DP-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Single

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SIR836DP-GE3

Unit-Weight: 0.017870 oz

Mounting-Style: SMD/SMT

Package-Case: PowerPAKR SO-8

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: PowerPAKR SO-8

FET-Type: MOSFET N-Channel, Metal Oxide

Power-Max: 15.6W

Transistor-Type: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 40V

Input-Capacitance-Ciss-Vds: 600pF @ 20V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 21A (Tc)

Rds-On-Max-Id-Vgs: 19 mOhm @ 10A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Gate-Charge-Qg-Vgs: 18nC @ 10V

Pd-Power-Dissipation: 15.6 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 21 A

Vds-Drain-Source-Breakdown-Voltage: 40 V

Rds-On-Drain-Source-Resistance: 19 mOhms

Transistor-Polarity: N-Channel

Tags: SIR836DP-T, SIR836, SIR83, SIR8, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIR836DP-T1-GE3 Description

***ure Electronics: SiR836DP Series N-Channel 40 V 0.0225 Ohm 15.6 W SMT Mosfet - PowerPAK SO-8

***et Europe: Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R

***ical: Trans MOSFET N-CH 40V 21A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET N-CH 40V 21A PPAK SO-8

***ark: N-CHANNEL 40-V (D-S) MOSFET

***: N-CHANNEL 40-V (D-S)

Market price

Part #	Mfg.	Description	Stock	Price
SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 21A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.3350
SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 21A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3807 500:$0.4759 100:$0.6424 10:$0.8330 1:$0.9500
SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 21A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3807 500:$0.4759 100:$0.6424 10:$0.8330 1:$0.9500
SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.6559 6000:€0.4469 12000:€0.3849 18000:€0.3549 30000:€0.3309
SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR836DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3049 6000:$0.2959 12000:$0.2839 18000:$0.2759 30000:$0.2689
SIR836DP-T1-GE3 DISTI # 05W6931	Vishay Intertechnologies	MOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V , RoHS Compliant: Yes	0	1:$0.6070 10:$0.5880 100:$0.4650 250:$0.4410 500:$0.4120 1000:$0.3300
SIR836DP-T1-GE3 DISTI # 86R3808	Vishay Intertechnologies	MOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$0.3110 3000:$0.3090 6000:$0.2940 12000:$0.2610
SIR836DP-T1-GE3 DISTI # 78-SIR836DP-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	446	1:$0.8400 10:$0.6700 100:$0.5090 500:$0.4200 1000:$0.3360 3000:$0.3050 6000:$0.2840
SIR836DPT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SIR836DP-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas - 51000

Image	Part #	Description
	Mfr.#: SIR836DP-T1-GE3 OMO.#: OMO-SIR836DP-T1-GE3	MOSFET 40V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SIR836DP-T1-GE3-CUT TAPE OMO.#: OMO-SIR836DP-T1-GE3-CUT-TAPE-1190	New and Original
	Mfr.#: SIR836DP OMO.#: OMO-SIR836DP-1190	New and Original
	Mfr.#: SIR836DP-T1-E3 OMO.#: OMO-SIR836DP-T1-E3-1190	New and Original
	Mfr.#: SIR836DP-T1-GE3 OMO.#: OMO-SIR836DP-T1-GE3-VISHAY	MOSFET N-CH 40V 21A PPAK SO-8
	Mfr.#: SIR836DPT1GE3 OMO.#: OMO-SIR836DPT1GE3-1190	Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SIR836DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes