SIR836DP-T1-GE3

SIR836DP-T1-GE3
Mfr. #:
SIR836DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SIR836DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR836DP-T1-GE3 DatasheetSIR836DP-T1-GE3 Datasheet (P4-P6)SIR836DP-T1-GE3 Datasheet (P7)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
21 A
Rds On - Drain-Source Resistance:
19 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
11.8 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
15.6 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Height:
1.04 mm
Length:
6.15 mm
Series:
SIR
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
35 S
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
13 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
15 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
SIR836DP-GE3
Unit Weight:
0.017870 oz
Tags
SIR836DP-T, SIR836, SIR83, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR836DP Series N-Channel 40 V 0.0225 Ohm 15.6 W SMT Mosfet - PowerPAK SO-8
***et Europe
Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R
***ical
Trans MOSFET N-CH 40V 21A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 40V 21A PPAK SO-8
***ark
N-CHANNEL 40-V (D-S) MOSFET
***
N-CHANNEL 40-V (D-S)
Part # Mfg. Description Stock Price
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.3350
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.3807
  • 500:$0.4759
  • 100:$0.6424
  • 10:$0.8330
  • 1:$0.9500
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.3807
  • 500:$0.4759
  • 100:$0.6424
  • 10:$0.8330
  • 1:$0.9500
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIR836DP-T1-GE3
    DISTI # SIR836DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€0.6559
    • 6000:€0.4469
    • 12000:€0.3849
    • 18000:€0.3549
    • 30000:€0.3309
    SIR836DP-T1-GE3
    DISTI # SIR836DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR836DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.3049
    • 6000:$0.2959
    • 12000:$0.2839
    • 18000:$0.2759
    • 30000:$0.2689
    SIR836DP-T1-GE3
    DISTI # 05W6931
    Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V , RoHS Compliant: Yes0
    • 1:$0.6070
    • 10:$0.5880
    • 100:$0.4650
    • 250:$0.4410
    • 500:$0.4120
    • 1000:$0.3300
    SIR836DP-T1-GE3
    DISTI # 86R3808
    Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$0.3110
    • 3000:$0.3090
    • 6000:$0.2940
    • 12000:$0.2610
    SIR836DP-T1-GE3
    DISTI # 78-SIR836DP-T1-GE3
    Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant
    446
    • 1:$0.8400
    • 10:$0.6700
    • 100:$0.5090
    • 500:$0.4200
    • 1000:$0.3360
    • 3000:$0.3050
    • 6000:$0.2840
    SIR836DPT1GE3Vishay Intertechnologies 
    RoHS: Compliant
    Europe - 3000
      SIR836DP-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant
      Americas - 51000
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        Availability
        Stock:
        42
        On Order:
        2025
        Enter Quantity:
        Current price of SIR836DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $0.83
        $0.83
        10
        $0.67
        $6.69
        100
        $0.51
        $50.80
        500
        $0.42
        $210.00
        1000
        $0.34
        $336.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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