SIR836DP-T

SIR836DP-T1-GE3 vs SIR836DP-T1-GE3-CUT TAPE vs SIR836DP-T1-E3

 
PartNumberSIR836DP-T1-GE3SIR836DP-T1-GE3-CUT TAPESIR836DP-T1-E3
DescriptionMOSFET 40V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current21 A--
Rds On Drain Source Resistance19 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge11.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation15.6 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
Height1.04 mm--
Length6.15 mm--
SeriesSIR--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandVishay / Siliconix--
Forward Transconductance Min35 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time8 ns--
Part # AliasesSIR836DP-GE3--
Unit Weight0.017870 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR836DP-T1-GE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SIR836DP-T1-GE3-CUT TAPE New and Original
SIR836DP-T1-E3 New and Original
Vishay
Vishay
SIR836DP-T1-GE3 MOSFET N-CH 40V 21A PPAK SO-8
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