STD7N65M6

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

DPAK-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

5 A

Rds On - Drain-Source Resistance:

990 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.25 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

6.9 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

60 W

Configuration:

Single

Channel Mode:

Enhancement

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

12.4 ns

Product Type:

MOSFET

Rise Time:

4.5 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

21.4 ns

Typical Turn-On Delay Time:

6.5 ns

Tags

STD7N65, STD7N6, STD7N, STD7, STD