IXFQ30N60X

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3P-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

30 A

Rds On - Drain-Source Resistance:

155 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

56 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Transistor Type:

1 N-Channel

Brand:

IXYS

Fall Time:

33 ns

Product Type:

MOSFET

Rise Time:

43 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

58 ns

Typical Turn-On Delay Time:

21 ns

Tags

IXFQ, IXF