IPAN65R650CEXKSA1

IPAN65R650CEXKSA1
Mfr. #:
IPAN65R650CEXKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPAN65R650CEXKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPAN65R650CEXKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Vds - Drain-Source Breakdown Voltage:
650 V
Tradename:
CoolMOS
Packaging:
Tube
Height:
16.15 mm
Length:
10.65 mm
Series:
CoolMOS CE
Width:
4.85 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Part # Aliases:
IPAN65R650CE SP001508828
Unit Weight:
0.068784 oz
Tags
IPAN65, IPAN6, IPAN, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
Trans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-220FP Tube, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 650V, 10.1A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Part # Mfg. Description Stock Price
IPAN65R650CEXKSA1
DISTI # V99:2348_16139586
Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-220FP Tube972
  • 500:$0.5725
  • 100:$0.6469
  • 10:$0.8252
  • 1:$0.9562
IPAN65R650CEXKSA1
DISTI # IPAN65R650CEXKSA1-ND
Infineon Technologies AGMOSFET NCH 650V 10.1A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1000:$0.5934
  • 500:$0.7353
  • 100:$0.9304
  • 10:$1.1610
  • 1:$1.3000
IPAN65R650CEXKSA1
DISTI # 32714093
Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-220FP Tube972
  • 500:$0.6154
  • 100:$0.6954
  • 14:$0.8871
IPAN65R650CEXKSA1
DISTI # IPAN65R650CEXKSA1
Infineon Technologies AG600V CoolMOS N-Channel Power MOSFET - Rail/Tube (Alt: IPAN65R650CEXKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.4639
  • 2000:$0.4469
  • 3000:$0.4309
  • 5000:$0.4169
  • 10000:$0.4089
IPAN65R650CEXKSA1
DISTI # SP001508828
Infineon Technologies AG600V CoolMOS N-Channel Power MOSFET (Alt: SP001508828)
RoHS: Compliant
Min Qty: 50
Europe - 0
  • 50:€0.7059
  • 100:€0.5509
  • 200:€0.4919
  • 300:€0.4479
  • 500:€0.4199
IPAN65R650CEXKSA1
DISTI # 34AC1642
Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:10.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes262
  • 1000:$0.4840
  • 500:$0.6130
  • 100:$0.6940
  • 10:$0.9030
  • 1:$1.0500
IPAN65R650CEXKSA1
DISTI # 726-IPAN65R650CEXKSA
Infineon Technologies AGMOSFET
RoHS: Compliant
0
  • 1:$1.0500
  • 10:$0.9030
  • 100:$0.6940
  • 500:$0.6130
  • 1000:$0.4840
IPAN65R650CEXKSA1
DISTI # 2781164
Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-220FP
RoHS: Compliant
262
  • 100:£0.6610
  • 25:£0.8610
  • 5:£0.9610
IPAN65R650CEXKSA1
DISTI # 2781164
Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-220FP
RoHS: Compliant
262
  • 100:$1.1000
  • 25:$1.3500
  • 5:$1.5500
Image Part # Description
IPAN65R650CEXKSA1

Mfr.#: IPAN65R650CEXKSA1

OMO.#: OMO-IPAN65R650CEXKSA1

MOSFET
IPAN65R650CEXKSA1

Mfr.#: IPAN65R650CEXKSA1

OMO.#: OMO-IPAN65R650CEXKSA1-INFINEON-TECHNOLOGIES

MOSFET NCH 650V 10.1A TO220-3
IPAN65R650CE

Mfr.#: IPAN65R650CE

OMO.#: OMO-IPAN65R650CE-1190

N-CH 650V 10,1A 650mOhm TO220FP
IPAN65R650CE(2)

Mfr.#: IPAN65R650CE(2)

OMO.#: OMO-IPAN65R650CE-2--1190

New and Original
Availability
Stock:
Available
On Order:
3000
Enter Quantity:
Current price of IPAN65R650CEXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.05
$1.05
10
$0.90
$9.03
100
$0.69
$69.40
500
$0.61
$306.50
1000
$0.48
$484.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
Top