SIR882DP-T1-GE3

Mfr. #:: SIR882DP-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CH 100V 60A PPAK SO-8
Lifecycle:: New from this manufacturer.
Datasheet:: SIR882DP-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SIR882DP-T1-GE3 more Information

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Tags: SIR882DP-T, SIR882D, SIR882, SIR88, SIR8, SIR

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SIR882DP-T1-GE3 Description

***ure Electronics: SiR882DP Series 100 V 8.7 mOhm SMT N-Channel Mosfet - PowerPAK® SO-8

***et Europe: Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET N-CH 100V 60A PPAK SO-8

***: N-CHANNEL 100-V (D-S)

***ark: MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):7100µohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case ;RoHS Compliant: Yes

***nell: MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:7100µohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Current Id Max:17.6A; Power Dissipation:5.4W

***ment14 APAC: MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7100µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:17.6A; Power Dissipation Pd:5.4W; Voltage Vgs Max:20V

SIR882DP-T1-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Market price

Part #	Mfg.	Description	Stock	Price
SIR882DP-T1-GE3 DISTI # V72:2272_09216058	Vishay Intertechnologies	Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	1	1:$2.7472
SIR882DP-T1-GE3 DISTI # V36:1790_09216058	Vishay Intertechnologies	Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	3000000:$1.1040 1500000:$1.1050 300000:$1.1230 30000:$1.1450 3000:$1.1480
SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	6000:$1.1057 3000:$1.1482
SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.2702 500:$1.5330 100:$1.8659 10:$2.3210 1:$2.5800
SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.2702 500:$1.5330 100:$1.8659 10:$2.3210 1:$2.5800
SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR882DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$1.0379 18000:$1.0669 12000:$1.0969 6000:$1.1439 3000:$1.1789
SIR882DP-T1-GE3 DISTI # 94T2661	Vishay Intertechnologies	MOSFET, N CH, 100V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes	0	1000:$1.5100 500:$1.7500 250:$2.0100 100:$2.2600 50:$2.5000 25:$2.7000 1:$2.8400
SIR882DP-T1-GE3 DISTI # 86R3813	Vishay Intertechnologies	MOSFET, N CH, 100V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:83WRoHS Compliant: Yes	0	10000:$1.0200 6000:$1.0600 4000:$1.1000 2000:$1.2200 1000:$1.2800 1:$1.3600
SIR882DP-T1-GE3 DISTI # 78-SIR882DP-T1-GE3	Vishay Intertechnologies	MOSFET 100 Volts 60 Amps 83 Watts RoHS: Compliant	0	1:$2.5100 10:$2.0900 100:$1.6200 500:$1.4100 1000:$1.1700 3000:$1.0900 6000:$1.0500
SIR882DP-T1-GE3	Vishay Siliconix	POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 100V, 0.0087OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	54
SIR882DP-T1-GE3 DISTI # 1859000	Vishay Intertechnologies	MOSFET,N CH,DIODE,100V,60A,PPAKSO8 RoHS: Compliant	6	500:$2.1400 100:$2.4400 10:$3.1600 1:$3.8000
SIR882DP-T1-GE3	Vishay Intertechnologies	MOSFET 100 Volts 60 Amps 83 Watts	Americas - 6000
SIR882DP-T1-GE3 DISTI # 1859000	Vishay Intertechnologies	MOSFET,N CH,DIODE,100V,60A,PPAKSO8	0	500:£1.0900 250:£1.1700 100:£1.2400 10:£1.6200 1:£2.1900

Image	Part #	Description
	Mfr.#: SIR882DP-T1-GE3 OMO.#: OMO-SIR882DP-T1-GE3	MOSFET 100 Volts 60 Amps 83 Watts
	Mfr.#: SIR882DP OMO.#: OMO-SIR882DP-1190	New and Original
	Mfr.#: SIR882DP-T1-GE3 OMO.#: OMO-SIR882DP-T1-GE3-VISHAY	MOSFET N-CH 100V 60A PPAK SO-8
	Mfr.#: SIR882DP-T1-GE3/R882 OMO.#: OMO-SIR882DP-T1-GE3-R882-1190	New and Original
	Mfr.#: SIR882DP-TI-GE3 OMO.#: OMO-SIR882DP-TI-GE3-1190	New and Original

SIR882DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes