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SIR882DP-T1-GE3

SIR882DP-T1-GE3
Mfr. #:
SIR882DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100 Volts 60 Amps 83 Watts
Lifecycle:
New from this manufacturer.
Datasheet:
SIR882DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR882DP-T1-GE3 DatasheetSIR882DP-T1-GE3 Datasheet (P4-P6)SIR882DP-T1-GE3 Datasheet (P7-P9)SIR882DP-T1-GE3 Datasheet (P10-P12)SIR882DP-T1-GE3 Datasheet (P13)
ECAD Model:
More Information:
SIR882DP-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
60 A
Rds On - Drain-Source Resistance:
7.1 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
58 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
83 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Height:
1.04 mm
Length:
6.15 mm
Series:
SIR
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
57 S
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
36 ns
Typical Turn-On Delay Time:
12 ns
Part # Aliases:
SIR882DP-GE3
Unit Weight:
0.017870 oz
Tags
SIR882DP-T, SIR882D, SIR882, SIR88, SIR8, SIR
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR882DP Series 100 V 8.7 mOhm SMT N-Channel Mosfet - PowerPAK® SO-8
***et Europe
Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 100V 60A PPAK SO-8
***
N-CHANNEL 100-V (D-S)
***ark
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):7100µohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case ;RoHS Compliant: Yes
***nell
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:7100µohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Current Id Max:17.6A; Power Dissipation:5.4W
***ment14 APAC
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7100µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:17.6A; Power Dissipation Pd:5.4W; Voltage Vgs Max:20V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Part # Mfg. Description Stock Price
SIR882DP-T1-GE3
DISTI # V72:2272_09216058		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
RoHS: Compliant		1
  • 1:$2.7472
SIR882DP-T1-GE3
DISTI # V36:1790_09216058		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
RoHS: Compliant		0
  • 3000000:$1.1040
  • 1500000:$1.1050
  • 300000:$1.1230
  • 30000:$1.1450
  • 3000:$1.1480
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$1.1057
  • 3000:$1.1482
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.2702
  • 500:$1.5330
  • 100:$1.8659
  • 10:$2.3210
  • 1:$2.5800
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.2702
  • 500:$1.5330
  • 100:$1.8659
  • 10:$2.3210
  • 1:$2.5800
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR882DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$1.0379
  • 18000:$1.0669
  • 12000:$1.0969
  • 6000:$1.1439
  • 3000:$1.1789
SIR882DP-T1-GE3
DISTI # 94T2661		Vishay IntertechnologiesMOSFET, N CH, 100V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes0
  • 1000:$1.5100
  • 500:$1.7500
  • 250:$2.0100
  • 100:$2.2600
  • 50:$2.5000
  • 25:$2.7000
  • 1:$2.8400
SIR882DP-T1-GE3
DISTI # 86R3813		Vishay IntertechnologiesMOSFET, N CH, 100V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:83WRoHS Compliant: Yes0
  • 10000:$1.0200
  • 6000:$1.0600
  • 4000:$1.1000
  • 2000:$1.2200
  • 1000:$1.2800
  • 1:$1.3600
SIR882DP-T1-GE3
DISTI # 78-SIR882DP-T1-GE3		Vishay IntertechnologiesMOSFET 100 Volts 60 Amps 83 Watts
RoHS: Compliant		0
  • 1:$2.5100
  • 10:$2.0900
  • 100:$1.6200
  • 500:$1.4100
  • 1000:$1.1700
  • 3000:$1.0900
  • 6000:$1.0500
SIR882DP-T1-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 60A I(D), 100V, 0.0087OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET54
    SIR882DP-T1-GE3
    DISTI # 1859000    		Vishay IntertechnologiesMOSFET,N CH,DIODE,100V,60A,PPAKSO8
    RoHS: Compliant    		6
    • 500:$2.1400
    • 100:$2.4400
    • 10:$3.1600
    • 1:$3.8000
    SIR882DP-T1-GE3Vishay IntertechnologiesMOSFET 100 Volts 60 Amps 83 WattsAmericas - 6000
      SIR882DP-T1-GE3
      DISTI # 1859000      		Vishay IntertechnologiesMOSFET,N CH,DIODE,100V,60A,PPAKSO80
      • 500:£1.0900
      • 250:£1.1700
      • 100:£1.2400
      • 10:£1.6200
      • 1:£2.1900
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      Availability
      Stock:
      Available
      On Order:
      4000
      Enter Quantity:
      Current price of SIR882DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.51
      $2.51
      10
      $2.09
      $20.90
      100
      $1.62
      $162.00
      500
      $1.41
      $705.00
      1000
      $1.17
      $1 170.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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