SIR882

SIR882ADP-T1-GE3 vs SIR882 vs SIR882ADP-T1-G

 
PartNumberSIR882ADP-T1-GE3SIR882SIR882ADP-T1-G
DescriptionMOSFET 100V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance7.2 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge60 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation83 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
Height1.04 mm--
Length6.15 mm--
SeriesSIR--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandVishay / Siliconix--
Forward Transconductance Min60 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time34 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesSIR882ADP-GE3--
Unit Weight0.017870 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR882ADP-T1-GE3 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
SIR882DP-T1-GE3 MOSFET 100 Volts 60 Amps 83 Watts
SIR882ADP-T1-GE3-CUT TAPE New and Original
SIR882 New and Original
SIR882ADP-T1-G New and Original
SIR882DP New and Original
SIR882DP-T1-GE3/R882 New and Original
SIR882DP-TI-GE3 New and Original
Vishay
Vishay
SIR882ADP-T1-GE3 MOSFET N-CH 100V 60A PPAK SO-8
SIR882DP-T1-GE3 MOSFET N-CH 100V 60A PPAK SO-8
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