Vishay Siliconix
SiR882DP
New Product
Document Number: 65932
S10-2681-Rev. B, 22-Nov-10
www.vishay.com
1
N-Channel 100 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Primary Side Switch
• Telecom/Server 48 V, Full/Half-Bridge dc-to-dc
• Industrial
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
a
Q
g
(Typ.)
100
0.0087 at V
GS
= 10 V
60
18.3 nC
0.0094 at V
GS
= 7.5 V
60
0.0115 at V
GS
= 4.5 V
60
Ordering Information: SiR882DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK
®
SO-8
Bottom View
N-Channel MOSFET
G
D
S
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
60
a
A
T
C
= 70 °C
55
T
A
= 25 °C
17.6
b, c
T
A
= 70 °C
13.9
b, c
Pulsed Drain Current
I
DM
80
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
60
a
T
A
= 25 °C
4.9
b, c
Single Pulse Avalanche Current
L =0.1 mH
I
AS
30
Single Pulse Avalanche Energy
E
AS
45
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
83
W
T
C
= 70 °C
53
T
A
= 25 °C
5.4
b, c
T
A
= 70 °C
3.4
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t 10 s
R
thJA
18 23
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0 1.5