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SIR882DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
www.vishay.com
4
Document Number: 65932
S10-2681-Rev. B, 22-Nov-10
Vishay Siliconix
SiR882DP
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.001
0.0 0.2 0.6 1.00.4 0.8 1.2
0.01
1
0.1
10
100
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
- 0.8
- 50 - 25 25 75 1250 50 100 150
- 0.6
- 0.2
- 0.4
0.0
0.2
0.4
T
J
- Junction Temperature (°C)
V
GS(th)
- Variance (V)
I
D
= 5 mA
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
02 6415387910
0.04
0.03
0.02
0.01
0.05
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)
I
D
= 20 A
T
J
= 25 °C
T
J
= 125 °C
Safe Operating Area, Junction-to-Ambient
0.01
0.01 0.1 1 10010
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
Limited by R
DS(on)
*
BVDSS Limited
T
A
= 25 °C
Single Pulse
1 ms
10 ms
1 s
10 s
100 ms
DC
Document Number: 65932
S10-2681-Rev. B, 22-Nov-10
www.vishay.com
5
Vishay Siliconix
SiR882DP
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
0 25 50 75 100 150125
16
32
48
64
80
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power, Junction-to-Case
0
0 25 50 75 100 125 150
20
40
60
80
100
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0
0 25 50 75 100 125 150
0.5
1.0
1.5
2.0
2.5
T
A
- Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 65932
S10-2681-Rev. B, 22-Nov-10
Vishay Siliconix
SiR882DP
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65932
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-4
10
-3
10
-2
10
-1
1 10 100 1000
1
0.1
0.01
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
t
1
P
DM
t
2
Duty Cycle = 0.5
Single Pulse
0.2
0.05
0.1
0.02
Normalized Thermal Transient Impedance, Junction-to-Case
10
-4
10
-3
10
-2
10
-1
1
1
0.1
0.01
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
P1-P3P4-P6P7-P9P10-P12P13-P13

SIR882DP-T1-GE3

Mfr. #:
Buy SIR882DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100 Volts 60 Amps 83 Watts
Lifecycle:
New from this manufacturer.
Delivery:
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