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IGW50N65H5FKSA1

IGW50N65H5FKSA1
Mfr. #:
IGW50N65H5FKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors IGBT PRODUCTS
Lifecycle:
New from this manufacturer.
Datasheet:
IGW50N65H5FKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IGW50N65H5FKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.65 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
80 A
Pd - Power Dissipation:
305 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 175 C
Series:
TRENCHSTOP 5 H5
Packaging:
Tube
Brand:
Infineon Technologies
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
240
Subcategory:
IGBTs
Tradename:
TRENCHSTOP
Part # Aliases:
IGW50N65H5 SP001001744
Unit Weight:
1.340411 oz
Tags
IGW50N65H5, IGW50N65H, IGW50N65, IGW50N, IGW5, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IGW50N65H5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
***et
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 80A
***i-Key
IGBT 650V 80A 305W PG-TO247-3
***ronik
IGBT 650V 50A 1.6V TO247-3
***ark
IGBT, 650V, 50A, TO247-3
***ukat
650V 80A 305W TO247
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 50A, TO247-3; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:305W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT
***nell
IGBT, 650V, 50A, TO247-3; Corrente di Collettore CC:50A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:305W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Part # Mfg. Description Stock Price
IGW50N65H5FKSA1
DISTI # IGW50N65H5FKSA1-ND		Infineon Technologies AGIGBT 650V 80A 305W PG-TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		137In Stock
  • 1200:$2.2547
  • 720:$2.6734
  • 240:$3.1405
  • 10:$3.8330
  • 1:$4.2700
IGW50N65H5FKSA1
DISTI # IGW50N65H5FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW50N65H5FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.1900
  • 242:$2.0900
  • 482:$1.9900
  • 1200:$1.8900
  • 2400:$1.8900
IGW50N65H5FKSA1
DISTI # 726-IGW50N65H5FKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		328
  • 1:$4.0600
  • 10:$3.4500
  • 100:$2.9900
  • 250:$2.8300
  • 500:$2.5400
IGW50N65H5
DISTI # 726-IGW50N65H5-ES		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant		300
  • 1:$4.0600
  • 10:$3.4500
  • 100:$2.9900
  • 250:$2.8300
  • 500:$2.5400
IGW50N65H5FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor
RoHS: Compliant		30
  • 1000:$1.7400
  • 500:$1.8300
  • 100:$1.9000
  • 25:$1.9900
  • 1:$2.1400
IGW50N65H5FKSA1
DISTI # 1107157P		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 650V 50A TO247, TU1288
  • 400:£1.8650
  • 200:£1.9000
  • 80:£2.0530
  • 20:£2.2030
IGW50N65H5FKSA1
DISTI # IGW50N65H5		Infineon Technologies AG650V 80A 305W TO247
RoHS: Compliant		240
  • 1:€5.7000
  • 10:€2.7000
  • 50:€1.7000
  • 100:€1.6400
IGW50N65H5FKSA1
DISTI # 2363280		Infineon Technologies AGIGBT, 650V, 50A, TO247-3
RoHS: Compliant		0
  • 500:£1.8000
  • 250:£1.8800
  • 100:£1.9200
  • 10:£2.0700
  • 1:£2.7900
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Availability
Stock:
328
On Order:
2311
Enter Quantity:
Current price of IGW50N65H5FKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$4.06
$4.06
10
$3.45
$34.50
100
$2.99
$299.00
250
$2.83
$707.50
500
$2.54
$1 270.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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