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BSC350N20NSFDATMA1

Mfr. #:
BSC350N20NSFDATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET DIFFERENTIATED MOSFETS
Lifecycle:
New from this manufacturer.
Datasheet:
BSC350N20NSFDATMA1 Datasheet
ECAD Model:
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of BSC350N20NSFDATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Quantity
Unit Price
Ext. Price
1
$2.83
$2.83
10
$2.41
$24.10
100
$1.92
$192.00
500
$1.68
$840.00
1000
$1.39
$1 390.00
2500
$1.30
$3 250.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
35 A
Rds On - Drain-Source Resistance:
31 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
30 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
150 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Series:
OptiMOS Fast Diode
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Forward Transconductance - Min:
29 S
Fall Time:
4.8 ns
Product Type:
MOSFET
Rise Time:
4.8 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
17 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
BSC350N20NSFD SP001108124
Tags
BSC3, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R
***ark
Mosfet, N-Ch, 200V, 35A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.031Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
Part # Mfg. Description Stock Price
BSC350N20NSFDATMA1
DISTI # BSC350N20NSFDATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 35A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 5000:$1.3785
BSC350N20NSFDATMA1
DISTI # BSC350N20NSFDATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 35A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5000In Stock
  • 1000:$1.5837
  • 500:$1.9114
  • 100:$2.4575
  • 10:$3.0580
  • 1:$3.3900
BSC350N20NSFDATMA1
DISTI # BSC350N20NSFDATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 35A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5000In Stock
  • 1000:$1.5837
  • 500:$1.9114
  • 100:$2.4575
  • 10:$3.0580
  • 1:$3.3900
BSC350N20NSFDATMA1
DISTI # BSC350N20NSFDATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 27A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC350N20NSFDATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$1.2900
  • 10000:$1.2900
  • 20000:$1.1900
  • 30000:$1.1900
  • 50000:$1.1900
BSC350N20NSFDATMA1
DISTI # 24AC4562
Infineon Technologies AGMOSFET, N-CH, 200V, 35A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.031ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes2807
  • 1:$2.8400
  • 10:$2.4100
  • 25:$2.2500
  • 50:$2.0900
  • 100:$1.9300
  • 250:$1.8100
  • 500:$1.6900
  • 1000:$1.4000
BSC350N20NSFDATMA1
DISTI # 726-BSC350N20NSFDATM
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
2953
  • 1:$2.8400
  • 10:$2.4100
  • 100:$1.9300
  • 500:$1.6900
  • 1000:$1.4000
  • 2500:$1.3100
  • 5000:$1.2600
BSC350N20NSFDATMA1
DISTI # 2770033
Infineon Technologies AGMOSFET, N-CH, 200V, 35A, TDSON
RoHS: Compliant
3897
  • 1:£2.5000
  • 10:£1.8700
  • 100:£1.5100
  • 250:£1.4200
  • 500:£1.3200
BSC350N20NSFDATMA1
DISTI # 2770033
Infineon Technologies AGMOSFET, N-CH, 200V, 35A, TDSON
RoHS: Compliant
2807
  • 1:$5.4100
  • 10:$4.8800
  • 100:$3.9200
  • 500:$3.0500
  • 1000:$2.5300
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