FS50R12W2T4_B11

Mfr. #:: FS50R12W2T4_B11
Manufacturer:: Infineon Technologies
Description:: IGBT Modules IGBT 1200V 50A
Lifecycle:: New from this manufacturer.
Datasheet:: FS50R12W2T4_B11 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Modules

Product:: IGBT Silicon Modules

Collector- Emitter Voltage VCEO Max:: 1200 V

Collector-Emitter Saturation Voltage:: 2.15 V

Continuous Collector Current at 25 C:: 83 A

Gate-Emitter Leakage Current:: 100 nA

Pd - Power Dissipation:: 335 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tray

Brand:: Infineon Technologies

Mounting Style:: Chassis Mount

Maximum Gate Emitter Voltage:: 20 V

Product Type:: IGBT Modules

Factory Pack Quantity:: 15

Subcategory:: IGBTs

Part # Aliases:: FS50R12W2T4B11BOMA1 SP000546148

Unit Weight:: 1.375685 oz

Tags: FS50R12W, FS50R12, FS50R1, FS50R, FS50, FS5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FS50R12W2T4_B11 Description

***et Europe: Trans IGBT Module N-CH 1.2KV 83A 21-pin EASY2B-2

***ark: Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):1.2Kv; Power Dissipation Pd:335W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:18Pins; Product Range:- Rohs Compliant: Yes

***ineon: EasyPACK 2B 1200 V / 50 A sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Low Switching Losses; Trench IGBT 4; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; PressFIT Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon; ups

Market price

Part #	Mfg.	Description	Stock	Price
FS50R12W2T4B11BOMA1 DISTI # FS50R12W2T4B11BOMA1-ND	Infineon Technologies AG	MOD IGBT LOW PWR EASY2B-2 RoHS: Compliant Min Qty: 15 Container: Tray	Temporarily Out of Stock	15:$49.0293
FS50R12W2T4_B11 DISTI # SP000546148	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 83A 21-pin EASY2B-2 (Alt: SP000546148) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€37.2900 500:€38.1900 100:€39.2900 50:€40.5900 25:€42.0900 10:€46.2900 1:€57.2900
FS50R12W2T4_B11 DISTI # SP000546148	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 83A 21-pin EASY2B-2 (Alt: SP000546148) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€35.7900 500:€38.3900 100:€39.7900 50:€41.2900 25:€42.9900 10:€44.7900 1:€48.7900
FS50R12W2T4B11BOMA1 DISTI # FS50R12W2T4B11BOMA1	Infineon Technologies AG	LOW POWER EASY - Trays (Alt: FS50R12W2T4B11BOMA1) RoHS: Compliant Min Qty: 15 Container: Tray	Americas - 0	150:$38.0900 90:$38.9900 60:$39.9900 30:$40.9900 15:$41.5900
FS50R12W2T4B11BOMA1 DISTI # FS50R12W2T4B11BOMA1	Infineon Technologies AG	LOW POWER EASY - Bulk (Alt: FS50R12W2T4B11BOMA1) RoHS: Compliant Min Qty: 9 Container: Bulk	Americas - 0	90:$37.4900 45:$38.0900 27:$39.4900 18:$40.9900 9:$42.4900
FS50R12W2T4_B11 DISTI # 84R7223	Infineon Technologies AG	IGBT Module,Transistor Polarity:N Channel,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:335W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:18Pins,Product Range:- RoHS Compliant: Yes	0
FS50R12W2T4_B11 DISTI # 641-FS50R12W2T4_B11	Infineon Technologies AG	IGBT Modules IGBT 1200V 50A	1	1:$52.1900 5:$51.0200 10:$49.0200 25:$47.4500 50:$47.4400 100:$43.9700
FS50R12W2T4B11BOMA1	Infineon Technologies AG	RoHS: Not Compliant	5	1000:$38.8400 500:$40.8900 100:$42.5700 25:$44.3900 1:$47.8100
FS50R12W2T4_B11 DISTI # 1833612	Infineon Technologies AG	IGBT, L POWER, 1200V, 50A, EASYPACK RoHS: Compliant	0	250:$65.6400 100:$67.5900 50:$72.9200 25:$72.9500 10:$75.3500 5:$78.4300 1:$80.2300
FS50R12W2T4_B11 DISTI # 1833612	Infineon Technologies AG	IGBT, L POWER, 1200V, 50A, EASYPACK RoHS: Compliant	0	50:£33.2300 10:£36.9300 5:£39.7100 1:£40.6200

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Availability

Stock:: 16
On Order:: 1999
Enter Quantity:

Current price of FS50R12W2T4_B11 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$52.19~~; ~~$52.19~~

5: ~~$51.02~~; ~~$255.10~~

10: ~~$49.02~~; ~~$490.20~~

25: ~~$47.45~~; ~~$1 186.25~~

50: ~~$47.44~~; ~~$2 372.00~~

100: ~~$43.97~~; ~~$4 397.00~~

250: ~~$42.70~~; ~~$10 675.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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FS50R12W2T4_B11

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes