STGW80H65DFB

STGW80H65DFB
Mfr. #:
STGW80H65DFB
Manufacturer:
STMicroelectronics
Description:
IGBT 650V 120A 469W TO-247
Lifecycle:
New from this manufacturer.
Datasheet:
STGW80H65DFB Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STGW80H65DFB more Information STGW80H65DFB Product Details
Product Attribute
Attribute Value
Manufacturer
STMicroelectronics
Product Category
IGBTs - Single
Series
600-650V IGBTs
Packaging
Tube
Unit-Weight
1.340411 oz
Mounting-Style
Through Hole
Package-Case
TO-247-3
Input-Type
Standard
Mounting-Type
Through Hole
Supplier-Device-Package
TO-247
Configuration
Single
Power-Max
469W
Reverse-Recovery-Time-trr
85ns
Current-Collector-Ic-Max
120A
Voltage-Collector-Emitter-Breakdown-Max
650V
IGBT-Type
Trench Field Stop
Current-Collector-Pulsed-Icm
240A
Vce-on-Max-Vge-Ic
2V @ 15V, 80A
Switching-Energy
2.1mJ (on), 1.5mJ (off)
Gate-Charge
414nC
Td-on-off-25°C
84ns/280ns
Test-Condition
400V, 80A, 10 Ohm, 15V
Pd-Power-Dissipation
469 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Collector-Emitter-Voltage-VCEO-Max
650 V
Collector-Emitter-Saturation-Voltage
1.6 V
Continuous-Collector-Current-at-25-C
120 A
Gate-Emitter-Leakage-Current
250 nA
Maximum-Gate-Emitter-Voltage
20 V
Continuous-Collector-Current-Ic-Max
80 A
Tags
STGW80H, STGW80, STGW8, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247
***ure Electronics
HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-247
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube
***ied Electronics & Automation
IGBT N-Ch 650V 80A High-Speed TO247
***i-Key
IGBT 650V 120A 469W TO-247
***ark
IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
IGBT SINGOLO 650V 120A TO-247; Corrente di Collettore CC:120A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:469W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Part # Mfg. Description Stock Price
STGW80H65DFB
DISTI # V36:1790_06560788
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    STGW80H65DFB
    DISTI # 497-14368-ND
    STMicroelectronicsIGBT 650V 120A 469W TO-247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    On Order
    • 1020:$4.8225
    • 510:$5.4525
    • 120:$6.1770
    • 30:$7.0277
    • 1:$8.0700
    STGW80H65DFB-4
    DISTI # STGW80H65DFB-4-ND
    STMicroelectronicsIGBT BIPO 650V 80A TO247
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Temporarily Out of Stock
    • 600:$9.9325
    STGW80H65DFB
    DISTI # STGW80H65DFB
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube (Alt: STGW80H65DFB)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1:€4.7900
    • 10:€4.3900
    • 25:€4.1900
    • 50:€3.9900
    • 100:€3.8900
    • 500:€3.6900
    • 1000:€3.4900
    STGW80H65DFB
    DISTI # STGW80H65DFB
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 600:$4.3900
    • 1200:$4.1900
    • 2400:$3.9900
    • 3600:$3.8900
    • 6000:$3.7900
    STGW80H65DFB
    DISTI # STGW80H65DFB-4
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB-4)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 600:$8.5900
    • 1200:$8.1900
    • 2400:$7.8900
    • 3600:$7.4900
    • 6000:$7.3900
    STGW80H65DFB
    DISTI # 45AC7608
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Bulk (Alt: 45AC7608)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk
    Americas - 0
    • 1:$7.1400
    • 10:$6.4600
    • 25:$6.1600
    • 50:$5.7500
    • 100:$5.3400
    • 250:$5.1100
    • 500:$4.6500
    STGW80H65DFB-4
    DISTI # STGW80H65DFB-4
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 4-Pin TO-247 Tube (Alt: STGW80H65DFB-4)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1:€8.7900
    • 10:€8.0900
    • 25:€7.6900
    • 50:€7.3900
    • 100:€7.1900
    • 500:€6.8900
    • 1000:€6.3900
    STGW80H65DFB
    DISTI # 45AC7608
    STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-247,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
    • 500:$4.7000
    • 250:$5.1500
    • 100:$5.3900
    • 50:$5.8000
    • 25:$6.2100
    • 10:$6.5100
    • 1:$7.2000
    STGW80H65DFB-4
    DISTI # 26Y5820
    STMicroelectronicsPTD HIGH VOLTAGE0
    • 1:$7.2500
    STGW80H65DFB
    DISTI # 511-STGW80H65DFB
    STMicroelectronicsIGBT Transistors Trench gte FieldStop IGBT 650V 80A
    RoHS: Compliant
    0
    • 1:$7.1300
    • 10:$6.4500
    • 25:$6.1500
    • 100:$5.3400
    • 250:$5.1000
    • 500:$4.6500
    • 1000:$4.0500
    STGW80H65DFB-4
    DISTI # 511-STGW80H65DFB-4
    STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed0
    • 1:$12.1700
    • 10:$11.1900
    • 25:$10.7300
    • 100:$9.4500
    • 250:$8.9900
    • 500:$8.4100
    • 1000:$7.7100
    STGW80H65DFBACTIVE COMPNTS/DIODES 25
      STGW80H65DFB
      DISTI # 7925814P
      STMicroelectronicsIGBT N-CH 650V 80A HIGH-SPEED TO247, TU384
      • 20:£4.5800
      • 10:£4.6700
      STGW80H65DFB
      DISTI # 2807180
      STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-247
      RoHS: Compliant
      472
      • 1020:$6.3200
      • 510:$7.2600
      • 120:$8.3300
      • 30:$9.5900
      • 1:$11.1400
      STGW80H65DFB
      DISTI # 2807180
      STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-247
      RoHS: Compliant
      472
      • 100:£4.2300
      • 50:£4.5600
      • 10:£4.8800
      • 5:£5.6600
      • 1:£6.2000
      Image Part # Description
      STGW80V60DF

      Mfr.#: STGW80V60DF

      OMO.#: OMO-STGW80V60DF

      IGBT Transistors Trench gate V series 600V 80A HiSpd
      STGW80H65FB

      Mfr.#: STGW80H65FB

      OMO.#: OMO-STGW80H65FB

      IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
      STGW80H65DFB

      Mfr.#: STGW80H65DFB

      OMO.#: OMO-STGW80H65DFB

      IGBT Transistors Trench gte FieldStop IGBT 650V 80A
      STGW80H65FB-4

      Mfr.#: STGW80H65FB-4

      OMO.#: OMO-STGW80H65FB-4

      IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
      STGW80H65DFB-4

      Mfr.#: STGW80H65DFB-4

      OMO.#: OMO-STGW80H65DFB-4-STMICROELECTRONICS

      IGBT Transistors IGBT & Power Bipola
      STGW80H65FB-4

      Mfr.#: STGW80H65FB-4

      OMO.#: OMO-STGW80H65FB-4-STMICROELECTRONICS

      IGBT Transistors IGBT & Power Bipola
      STGW80H65FB

      Mfr.#: STGW80H65FB

      OMO.#: OMO-STGW80H65FB-STMICROELECTRONICS

      IGBT Transistors IGBT & Power Bipola
      STGW80V60F

      Mfr.#: STGW80V60F

      OMO.#: OMO-STGW80V60F-STMICROELECTRONICS

      IGBT Transistors IGBT & Power Bipola
      STGW80V60DF

      Mfr.#: STGW80V60DF

      OMO.#: OMO-STGW80V60DF-STMICROELECTRONICS

      IGBT 600V 120A 469W TO247
      STGW80H65DFB

      Mfr.#: STGW80H65DFB

      OMO.#: OMO-STGW80H65DFB-STMICROELECTRONICS

      IGBT 650V 120A 469W TO-247
      Availability
      Stock:
      Available
      On Order:
      2500
      Enter Quantity:
      Current price of STGW80H65DFB is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $5.68
      $5.68
      10
      $5.40
      $54.01
      100
      $5.12
      $511.65
      500
      $4.83
      $2 416.15
      1000
      $4.55
      $4 548.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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