STP240N10F7

STP240N10F7
Mfr. #:
STP240N10F7
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII
Lifecycle:
New from this manufacturer.
Datasheet:
STP240N10F7 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STP240N10F7 more Information STP240N10F7 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
110 A
Rds On - Drain-Source Resistance:
3.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
4.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
160 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
STripFET
Packaging:
Tube
Series:
STP240N10F7
Transistor Type:
1 N-Channel
Brand:
STMicroelectronics
Fall Time:
112 ns
Product Type:
MOSFET
Rise Time:
139 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
110 ns
Typical Turn-On Delay Time:
49 ns
Unit Weight:
0.011640 oz
Tags
STP24, STP2, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 100 V, 2.85 mOhm typ., 110 A STripFET F7 Power MOSFET in a TO-220 package
***ical
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 100V 110A STripFET F7 TO-220
***ark
MOSFET, N-CH, 100V, 110A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
***ical
Trans MOSFET N-CH Si 80V 223A 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
N-Channel 80 V 2.7 mOhm 178 nC Flange Mount Power Trench Mosfet - TO-220
***emi
N-Channel PowerTrench® MOSFET 80V, 223A, 2.7mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 80V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***p One Stop
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
Single N-Channel 100 V 3 mOhm 155 nC OptiMOS™ Power Mosfet - TO-220-3
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V; Power Dissipation:300W; No. of Pins:3Pins RoHS Compliant: Yes
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 100 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 28 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 84 / Turn-ON Delay Time ns = 34 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***icroelectronics
N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
*** Source Electronics
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N CH 100V 180A TO-220
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0023Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Msl:- Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
Single N-Channel 80 V 2.8 mOhm 155 nC OptiMOS™ Power Mosfet - TO-220-3
***ow.cn
Trans MOSFET N-CH 80V 100A Automotive 3-Pin(3+Tab) TO-220 Tube
***ponent Stockers USA
100 A 80 V 0.0028 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ment14 APAC
MOSFET, N CH, 100A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ure Electronics
IPP030N10N5 Series 100 V 120 A OptiMOS™5 Power Transistor MOSFET - TO-220-3
***ical
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
***ark
MOSFET, N-CH, 100V, 120A, 175DEG C, 250W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***emi
N-Channel Power MOSFET, QFET®, 100 V, 164 A, 4.7 mΩ, TO-220
***Yang
Trans MOSFET N-CH 100V 164A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
FDP047N10 Series 100 V 164 A 4.7 mOhm N-Channel PowerTrench Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET,N CH,100V,120A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
STripFET™ F7 Power MOSFETs
STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STMicroelectronics STripFET VII Power MOSFETs
Part # Mfg. Description Stock Price
STP240N10F7
DISTI # 25948144
STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
440
  • 3:$4.6002
STP240N10F7
DISTI # 497-13588-5-ND
STMicroelectronicsMOSFET N-CH 100V 180A TO220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$3.1017
STP240N10F7
DISTI # V99:2348_17625125
STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
440
  • 1:$4.6002
STP240N10F7
DISTI # V36:1790_06564633
STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
  • 1000:$2.4580
STP240N10F7
DISTI # STP240N10F7
STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin TO-220 Tube (Alt: STP240N10F7)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 700
  • 1000:€1.2900
  • 100:€1.3900
  • 500:€1.3900
  • 50:€1.4900
  • 10:€1.5900
  • 25:€1.5900
  • 1:€1.7900
STP240N10F7
DISTI # STP240N10F7
STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin TO-220 Tube (Alt: STP240N10F7)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Asia - 0
  • 50000:$1.1184
  • 25000:$1.1486
  • 10000:$1.1806
  • 5000:$1.2319
  • 3000:$1.2879
  • 2000:$1.3492
  • 1000:$1.4167
STP240N10F7
DISTI # STP240N10F7
STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP240N10F7)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$2.5900
  • 6000:$2.6900
  • 4000:$2.7900
  • 2000:$2.9900
  • 1000:$3.0900
STP240N10F7
DISTI # 45AC7711
STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin TO-220 Tube - Bulk (Alt: 45AC7711)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 500:$2.4500
  • 250:$2.6100
  • 100:$3.2000
  • 50:$3.7900
  • 25:$4.1500
  • 10:$4.7500
  • 1:$5.5900
STP240N10F7
DISTI # 45AC7711
STMicroelectronicsMOSFET, N-CH, 100V, 110A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:110A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.00285ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V RoHS Compliant: Yes223
  • 250:$1.8100
  • 500:$1.8100
  • 1:$1.9700
  • 10:$1.9700
  • 25:$1.9700
  • 50:$1.9700
  • 100:$1.9700
STP240N10F7
DISTI # 511-STP240N10F7
STMicroelectronicsMOSFET N-Ch 100V 2.5mOhm 180A STripFET VII
RoHS: Compliant
457
  • 1:$5.5800
  • 10:$4.7400
  • 100:$4.1100
  • 250:$3.9000
  • 500:$3.5000
  • 1000:$2.9500
  • 2000:$2.8000
STP240N10F7
DISTI # 8607567P
STMicroelectronicsMOSFET N-CH 100V 110A STRIPFET F7 TO-220, TU692
  • 10:£1.1150
STP240N10F7
DISTI # 2807215
STMicroelectronicsMOSFET, N-CH, 100V, 110A, TO-220AB
RoHS: Compliant
687
  • 1000:$2.4300
  • 500:$2.6100
  • 250:$2.9300
  • 100:$3.2500
  • 10:$3.6700
  • 1:$4.2100
STP240N10F7
DISTI # 2807215
STMicroelectronicsMOSFET, N-CH, 100V, 110A, TO-220AB687
  • 500:£2.7200
  • 250:£3.0400
  • 100:£3.2000
  • 10:£3.6900
  • 1:£4.8000
STP240N10F7
DISTI # XSKDRABV0028137
STMicroelectronicsPowerField-EffectTransistor,80AI(D),55V,0.008ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB
RoHS: Compliant
550 in Stock0 on Order
  • 550:$2.1200
  • 300:$2.2700
STP240N10F7
DISTI # STP240N10F7
STMicroelectronicsN-Ch 100V 110A 300W 0,0032R TO220
RoHS: Compliant
0
  • 10:€1.8800
  • 50:€1.5800
  • 200:€1.4300
  • 500:€1.3800
Image Part # Description
IPP039N10N5AKSA1

Mfr.#: IPP039N10N5AKSA1

OMO.#: OMO-IPP039N10N5AKSA1

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V20202G-M3/4W

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Schottky Diodes & Rectifiers 20A 200V Trench Stky Rectifier
CMT-5023S-SMT-TR

Mfr.#: CMT-5023S-SMT-TR

OMO.#: OMO-CMT-5023S-SMT-TR

Speakers & Transducers Buzzer 5mm sq 4kHz 3V SMT
C1005X5R1V105K050BE

Mfr.#: C1005X5R1V105K050BE

OMO.#: OMO-C1005X5R1V105K050BE

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 35V 1.00uF X5R 10% Soft Term
0697H1000-02

Mfr.#: 0697H1000-02

OMO.#: OMO-0697H1000-02

Fuses with Leads (Through Hole) 1A 350V
VS-16CTQ100-M3

Mfr.#: VS-16CTQ100-M3

OMO.#: OMO-VS-16CTQ100-M3-VISHAY

DIODE ARRAY SCHOTTKY 100V TO220
A750MS477M1EAAE015

Mfr.#: A750MS477M1EAAE015

OMO.#: OMO-A750MS477M1EAAE015-KEMET

CAP, 470F, 25V, 20%
IPP039N10N5AKSA1

Mfr.#: IPP039N10N5AKSA1

OMO.#: OMO-IPP039N10N5AKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 100V 100A TO220-3
CMT-5023S-SMT-TR

Mfr.#: CMT-5023S-SMT-TR

OMO.#: OMO-CMT-5023S-SMT-TR-CUI

AUDIO MAGNETIC XDCR 2-4V SMD
CRCW06034K70JNEAC

Mfr.#: CRCW06034K70JNEAC

OMO.#: OMO-CRCW06034K70JNEAC-VISHAY-DALE

D11/CRCW0603-C 200 4K7 5% ET1
Availability
Stock:
457
On Order:
2440
Enter Quantity:
Current price of STP240N10F7 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.58
$5.58
10
$4.74
$47.40
100
$4.11
$411.00
250
$3.90
$975.00
500
$3.50
$1 750.00
1000
$2.95
$2 950.00
2000
$2.80
$5 600.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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