IKZ50N65NH5XKSA1

Mfr. #:: IKZ50N65NH5XKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors IGBT PRODUCTS
Lifecycle:: New from this manufacturer.
Datasheet:: IKZ50N65NH5XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IKZ50N65NH5XKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-4

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.65 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 85 A

Pd - Power Dissipation:: 273 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: TRENCHSTOP 5 H5

Packaging:: Tube

Height:: 20.7 mm

Length:: 15.87 mm

Width:: 5.31 mm

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 240

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IKZ50N65NH5 SP001160042

Tags: IKZ5, IKZ

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

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IKZ50N65NH5XKSA1 Description

***ical: Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube

***ark: Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:273W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes

***ineon: To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server

IKZ50N65NH5XKSA1 More Information

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

Home Appliance Solutions: Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More

TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs: Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.

Market price

Part #	Mfg.	Description	Stock	Price
IKZ50N65NH5XKSA1 DISTI # V99:2348_06377850	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube	59	1200:$3.8490 720:$4.2699 240:$4.9460 10:$5.9830 1:$7.2743
IKZ50N65NH5XKSA1 DISTI # V36:1790_06377850	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube	0	240000:$3.2560 120000:$3.2590 24000:$3.6050 2400:$4.2500 240:$4.3600
IKZ50N65NH5XKSA1 DISTI # IKZ50N65NH5XKSA1-ND	Infineon Technologies AG	IGBT 650V 50A CO-PACK TO-247-4 RoHS: Compliant Min Qty: 1 Container: Tube	182In Stock	720:$4.5485 240:$5.2235 25:$6.0160 10:$6.3090 1:$6.9800
IKZ50N65NH5XKSA1 DISTI # 31006671	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube	240	240:$3.2985
IKZ50N65NH5XKSA1 DISTI # 26197318	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube	59	2:$7.2743
IKZ50N65NH5XKSA1 DISTI # IKZ50N65NH5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 85A 4-Pin TO-247 Tube - Bulk (Alt: IKZ50N65NH5XKSA1) Min Qty: 104 Container: Bulk	Americas - 0	1040:$2.9900 520:$3.0900 312:$3.1900 208:$3.2900 104:$3.3900
IKZ50N65NH5XKSA1 DISTI # IKZ50N65NH5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 85A 4-Pin TO-247 Tube - Rail/Tube (Alt: IKZ50N65NH5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$3.4900 1440:$3.5900 960:$3.6900 480:$3.7900 240:$3.9900
IKZ50N65NH5XKSA1 DISTI # SP001160042	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 85A 4-Pin TO-247 Tube (Alt: SP001160042) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€2.9900 500:€3.0900 100:€3.1900 50:€3.2900 25:€3.3900 10:€3.6900 1:€4.5900
IKZ50N65NH5XKSA1 DISTI # 34AC1636	Infineon Technologies AG	IGBT, SINGLE, 650V, 85A, TO-247,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:273W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:4Pins,RoHS Compliant: Yes	193	500:$4.3800 250:$4.8100 100:$5.0300 50:$5.4100 25:$5.7900 10:$6.0700 1:$6.7200
IKZ50N65NH5XKSA1 DISTI # 726-IKZ50N65NH5XKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	219	1:$6.6500 10:$6.0100 25:$5.7300 100:$4.9800 250:$4.7600 500:$4.3400
IKZ50N65NH5XKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 85A I(C), 650V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	60	1000:$3.1700 500:$3.3400 100:$3.4800 25:$3.6200 1:$3.9000
IKZ50N65NH5XKSA1 DISTI # 2781036	Infineon Technologies AG	IGBT, SINGLE, 650V, 85A, TO-247 RoHS: Compliant	193	1000:$5.2700 500:$5.3700 250:$5.6700 100:$6.0000 10:$6.7800 1:$7.2500
IKZ50N65NH5XKSA1 DISTI # 2781036	Infineon Technologies AG	IGBT, SINGLE, 650V, 85A, TO-247	203	500:£3.1700 250:£3.4800 100:£3.6500 10:£4.1900 1:£5.3500
IKZ50N65NH5XKSA1 DISTI # IKZ50N65NH5	Infineon Technologies AG	650V 85A 273W TO247-4 RoHS: Compliant	228	1:€6.8900 10:€3.8900 50:€2.8900 100:€2.7800

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Availability

Stock:: 219
On Order:: 2202
Enter Quantity:

Current price of IKZ50N65NH5XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$6.65~~; ~~$6.65~~

10: ~~$6.01~~; ~~$60.10~~

25: ~~$5.73~~; ~~$143.25~~

100: ~~$4.98~~; ~~$498.00~~

250: ~~$4.76~~; ~~$1 190.00~~

500: ~~$4.34~~; ~~$2 170.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

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Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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