STF28N60DM2

Mfr. #:: STF28N60DM2
Manufacturer:: STMicroelectronics
Description:: MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package
Lifecycle:: New from this manufacturer.
Datasheet:: STF28N60DM2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STF28N60DM2 more Information STF28N60DM2 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220FP-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 21 A

Rds On - Drain-Source Resistance:: 130 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 25 V

Qg - Gate Charge:: 34 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 30 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: MDmesh

Series:: STF28N60DM2

Transistor Type:: 1 N-Channel

Brand:: STMicroelectronics

Forward Transconductance - Min:: -

Fall Time:: 9.3 ns

Product Type:: MOSFET

Rise Time:: 7.3 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 53 ns

Typical Turn-On Delay Time:: 16 ns

Unit Weight:: 0.081130 oz

Tags: STF28N60, STF28N6, STF28, STF2, STF

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STF28N60DM2 Description

***icroelectronics: N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package

***ical: Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP Tube

***enic: 600V 21A 130m´Î@10V10.5A 30W 4V@250uA 1.6pF@100V N Channel 1.5nF@100V 34nC@10V -55¡Í~+150¡Í@(Tj) TO-220FP-3 MOSFETs ROHS

***nell: MOSFET, N-CH, 600V, 21A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 30W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***ow.cn: Trans MOSFET N-CH Si 600V 26.7A Automotive 3-Pin(3+Tab) TO-220FP Tube

***el Electronic: In a Tube of 450, N-Channel MOSFET, 26.7 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPAW60R190CEXKSA1

***ineon SCT: Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS

***ark: Mosfet, N-Ch, 600V, 26.7A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:26.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPAW60R190CEXKSA1

***ineon: Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power

***icroelectronics: N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220 package

***ical: Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB Tube

***el Electronic: Dual-Output, 2-A/1-A Low Dropout Voltage Regulators with Integrated SVS 24-HTSSOP -40 to 125

***ure Electronics: Single N-Channel 650 V 0.15 O 190 W Flange Mount Power Mosfet - TO-220-3

***ark: MOSFET, N-CH, 600V, 22A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***SIT Distribution GmbH: Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ical: Trans MOSFET N-CH Si 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak

***el Electronic: VISHAY SIHA22N60E-E3 MOSFET, N CHANNEL, 600V, 21A, TO-220F

***et: E SERIES HIGH VOLTAGE THIN-LEAD TO-220 FULLPAK 9 POWER MOSFE

***id Electronics: Power Field-Effect Transistor 8A I(D) 600V

***ark: MOSFET, N CHANNEL, 600V, 21A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

***icroelectronics: N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220FP package

***ure Electronics: N-Channel 600 V 0.125 Ohm 45.5 nC MDmesh II Plus Power Mosfet - TO-220FP

***p One Stop: Trans MOSFET N-CH 650V 26A 3-Pin(3+Tab) TO-220FP Tube

***(Formerly Allied Electronics): MOSFET N-Ch 600V 26A MDmeshIIPlusTO220FP

***ark: MOSFET, N-CH, 600V, 26A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 26A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-Channel 600V - 0.25Ohm - 20A TO-220FP MDmesh™ POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 20A TO220FP

***ark: MOSFET, N CHANNEL, 600V, 20A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:-RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***enic: 600V 22A 165m´Î@10V11A 39W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET Transistor; Transistor Polarity: N; MOSFET Transistor; Transistor Polarity: N Channel; Drain Source Voltage Vds: 600V; Continuous Drain Current Id: 22A; On Resistance Rds(on): 0.14ohm; Transistor Mounting: Through Hole; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

STF28N60DM2 More Information

MDmesh DM2 Power MOSFETs: STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

Part #	Mfg.	Description	Stock	Price
STF28N60DM2 DISTI # V36:1790_13796362	STMicroelectronics	Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP Tube	0
STF28N60DM2 DISTI # 497-16351-5-ND	STMicroelectronics	MOSFET N-CH 600V 21A RoHS: Compliant Min Qty: 1 Container: Tube	158In Stock	2500:$2.6880 500:$3.3466 100:$3.9312 50:$4.5360 10:$4.7980 1:$5.3400
STF28N60DM2 DISTI # STF28N60DM2	STMicroelectronics	N-channel MDmesh >350 V to 700 V - Rail/Tube (Alt: STF28N60DM2) RoHS: Not Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$2.3900 6000:$2.4900 4000:$2.5900 2000:$2.6900 1000:$2.7900
STF28N60DM2 DISTI # STF28N60DM2	STMicroelectronics	N-channel MDmesh >350 V to 700 V (Alt: STF28N60DM2) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.4900 100:€1.6900 500:€1.6900 50:€1.7900 10:€1.8900 25:€1.8900 1:€2.0900
STF28N60DM2 DISTI # 74Y7743	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$2.4000
STF28N60DM2 DISTI # 511-STF28N60DM2	STMicroelectronics	MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package RoHS: Compliant	936	1:$5.0800 10:$4.3200 100:$3.7400 250:$3.5500 500:$3.1800 1000:$2.6800 2000:$2.5500
STF28N60DM2 DISTI # 1116463P	STMicroelectronics	MOSFET N-CH 600V 22A MDMESH DM2 TO-220FP, TU	26	1000:£1.9500 500:£2.3150 100:£2.7150 10:£3.1250
STF28N60DM2 DISTI # 2531106	STMicroelectronics	MOSFET, N-CH, 600V, 21A, TO-220FP	0	500:£2.4500 250:£2.7400 100:£2.8900 10:£3.3200 1:£4.3500
STF28N60DM2 DISTI # 2531106	STMicroelectronics	MOSFET, N-CH, 600V, 21A, TO-220FP RoHS: Compliant	0	1000:$4.5200 500:$5.3600 100:$6.6100 50:$7.2600 1:$9.0200

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STF28N60DM2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes