IRG4RC10SDPbF
2 www.irf.com
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Details of note through are on the last page
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 0.64 — V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.58 1.8 I
C
= 8.0A V
GE
= 15V
— 2.05 — V I
C
= 14.0A See Fig. 2, 5
— 1.68 — I
C
= 8.0A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage — -9.5 — mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance 3.65 5.48 — S V
CE
= 100V, I
C
=8.0A
I
CES
Zero Gate Voltage Collector Current — — 250 µA V
GE
= 0V, V
CE
= 600V
— — 1000 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 1.5 1.8 V I
C
=4.0A See Fig. 13
— 1.4 1.7 I
C
=4.0A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge (turn-on) — 15 22 I
C
= 8.0A
Qge Gate - Emitter Charge (turn-on) — 2.42 3.6 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) — 6.53 9.8 V
GE
= 15V
t
d(on)
Turn-On Delay Time — 76 — T
J
= 25°C
t
r
Rise Time — 32 — ns I
C
= 8.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time — 815 1200 V
GE
= 15V, R
G
= 100Ω
t
f
Fall Time — 720 1080 Energy losses include "tail" and
E
on
Turn-On Switching Loss — 0.31 — diode reverse recovery.
E
off
Turn-Off Switching Loss — 3.28 — mJ See Fig. 9, 10, 18
E
ts
Total Switching Loss — 3.60 10.9
E
ts
Total Switching Loss — 1.46 2.6 mJ I
C
= 5.0A
t
d(on)
Turn-On Delay Time — 70 — T
J
= 150°C, See Fig. 10,11, 18
t
r
Rise Time — 36 — ns I
C
= 8.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time — 890 — V
GE
= 15V, R
G
= 100Ω
t
f
Fall Time — 890 — Energy losses include "tail" and
E
ts
Total Switching Loss — 3.83 — mJ diode reverse recovery.
L
E
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
C
ies
Input Capacitance — 280 — V
GE
= 0V
C
oes
Output Capacitance — 30 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 4.0 — ƒ = 1.0MHz
t
rr
Diode Reverse Recovery Time — 28 42 ns T
J
= 25°C See Fig.
—3857 T
J
= 125°C 14 I
F
=4.0A
I
rr
Diode Peak Reverse Recovery Current — 2.9 5.2 A T
J
= 25°C See Fig.
— 3.7 6.7 T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge — 40 60 nC T
J
= 25°C See Fig.
— 70 105 T
J
= 125°C 16 di/dt = 200A/µs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery — 280 — A/µs T
J
= 25°C See Fig.
During t
b
— 235 — T
J
= 125°C 17
Parameter Min. Typ. Max. Units Conditions
