IRG4RC10SDPbF
www.irf.com 5
0 20 40 60 80 100
3.30
3.35
3.40
3.45
3.50
3.55
3.60
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 8A
CC
GE
J
C
°
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
R
G
, Gate Resistance (Ω)
0 5 10 15 20
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V = 400V
I = 8A
CC
C
1 10 100
0
100
200
300
400
500
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
C
ies
C
oes
C
res
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
°
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
16
C
I = A
8
C
I = A
4
C
100Ω
