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IRG4RC10SDTRRP
P1-P3
P4-P6
P7-P9
P10-P11
IRG4RC10SDPbF
www.irf.com
7
Fig. 16
- Typical Stored Charge vs. di
f
/dt
Fig. 17
- Typical di
(rec)M
/dt vs. di
f
/dt,
Fig. 14
- Typical Reverse Recovery vs. di
f
/dt
Fig. 15
- Typical Recovery Current vs. di
f
/dt
di
(rec) M/dt- (A /µs)
Qrr- (nC)
Irr-
( A)
trr- (n
C)
20
25
30
35
40
45
50
100
1000
f
di /dt - (A
/µ
s)
I = 8.0A
I =
4
.
0A
F
F
V =
200V
T = 125°C
T = 25°C
R
J
J
0
2
4
6
8
10
12
14
100
1000
f
I =
8
.
0A
I =
4
.0
A
V = 20
0V
T =
12
5°C
T = 25°C
R
J
J
di /dt - (A
/µ
s)
F
F
0
40
80
120
160
200
100
1000
f
di /dt - (A
/µ
s)
I = 8.0A
I =
4
.0
A
V
= 20
0V
T = 1
25°C
T = 25°C
R
J
J
F
F
100
1000
100
1000
f
di /dt - (A
/µ
s)
A
I = 8.0A
I = 4.0A
V = 20
0V
T =
12
5°C
T = 25°C
R
J
J
F
F
IRG4RC10SDPbF
8
www.irf.com
Same t
y
pe
device
as
D.U
.T.
D.U.T.
430µ
F
80%
of Vc
e
Fig. 18a
-
Test Circuit for Measurement of
I
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
, I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
Fig. 18b
-
Test Waveforms for Circuit of Fig. 18a, Defining
E
off
, t
d(off)
, t
f
∫
Vce ie dt
t2
t1
5% Vce
Ic
Ipk
Vc
c
10% Ic
Vce
t1
t2
DUT VO
LTAGE
AN
D CURRE
NT
GATE VOLTA
GE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
DIODE REVERSE
RECOVERY ENERGY
tx
Eon =
∫
Erec =
t4
t3
Vd id dt
t4
t3
DI
ODE
RE
COV
ERY
W
AVEFORMS
Ic
Vpk
10% Vcc
Irr
10% Irr
Vcc
trr
∫
Qr
r =
trr
tx
id
dt
Fig. 18c
-
Test Waveforms for Circuit of Fig. 18a,
Defining E
on
, t
d(on)
, t
r
Fig. 18d
-
Test Waveforms for Circuit of Fig. 18a,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Vd
Ic dt
Vce
Ic
dt
Ic dt
t
=5µs
d(on
)
t
t
f
t
r
90%
t
d(
of f)
10%
90%
10%
5%
C
I
C
E
on
E
of
f
ts
o
n
off
E
=
(E
+
E
)
V
V
ge
IRG4RC10SDPbF
www.irf.com
9
Vg
GATE SIGNAL
DE
VI
CE U
ND
ER T
E
S
T
CURR
E
NT
D.U.T.
VO
LTAGE I
N D
.
U.T
.
CURR
E
NT
IN D1
t0
t1
t2
D.U.T.
V *
c
50V
L
1000V
6000µF
100V
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current
Test Circuit
R
L
=
480V
4 X I
C
@25°C
0 -
480V
Figure 18e. Macro Waveforms for
Figure 18a's
Test Circuit
P1-P3
P4-P6
P7-P9
P10-P11
IRG4RC10SDTRRP
Mfr. #:
Buy IRG4RC10SDTRRP
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V DC-1 KHZ (STD) COPACK IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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