Matched Monolithic
Dual Transistor
Data Sheet
MAT01
FEATURES
Low V
OS
(V
BE
match): 40 µV typical, 100 µV maximum
Low TCV
OS
: 0.5 µV/°C maximum
High h
FE
: 500 minimum
Excellent h
FE
linearity from 10 nA to 10 mA
Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz
High breakdown: 45 V min
APPLICATIONS
Weigh scales
Low noise, op amp, front end
Current mirror and current sink/source
Low noise instrumentation amplifiers
Voltage controlled attenuators
Log amplifiers
PIN CONNECTION DIAGRAM
Figure 1.
GENERAL DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
silicon nitride triple passivation process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40 µV,
temperature drift of 0.15 µV/°C, and h
FE
matching of 0.7%.
High h
FE
is provided over a six decade range of collector
current, including an exceptional h
FE
of 590 at a collector
current of only 10 nA. The high gain at low collector current
makes the MAT01 ideal for use in low power, low level input
stages.
C
1
MAT01
TOP VIEW
(Not to Scale)
E
1
B
1
NOTES
1. SUBSTRATE IS CONNECTED TO CASE.
C
2
E
2
00282-001
B
2
1
3
6
4
2 5
Rev. D Document Feedback
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MAT01* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
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DOCUMENTATION
Application Notes
AN-139: A Low Voltage Power Supply Watch-Dog Monitor
Circuit
Data Sheet
MAT01: Matched Monolithic Dual Transistor Data Sheet
DESIGN RESOURCES
MAT01 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
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MAT01 Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Pin Connection Diagram ................................................................ 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Characteristics ............................................................. 3
Absolute Maximum Ratings ............................................................ 5
ESD Caution...................................................................................5
Typical Performance Characteristics ..............................................6
Test Circuits ........................................................................................8
Applications Information .................................................................9
Typical Applications ....................................................................... 10
Outline Dimensions ....................................................................... 11
Ordering Guide .......................................................................... 11
REVISION HISTORY
9/14Rev. C to Rev. D
Changes to Figure 4 and Figure 7 ................................................... 6
4/13Rev. B to Rev. C
Updated Format .................................................................. Universal
Added Applications Section, Deleted Figure 2,
Renumbered Sequentially ................................................................ 1
Deleted Table 3, Renumbered Sequentially................................... 4
Changes to Table 3 ............................................................................ 5
Changes to Typical Performance Characteristics Section ........... 6
Updated Outline Dimensions ....................................................... 11
Changes to Ordering Guide .......................................................... 11
2/02—Rev. A to Rev. B
Edits to Features................................................................................. 1
Deleted Wafer Test Limits ................................................................ 3
Deleted DICE Characteristics .......................................................... 3
Edits to Table 5 ................................................................................... 7
Rev. D | Page 2 of 12

MAT01GH

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Bipolar Transistors - BJT MATCHED MONO DUAL NPN
Lifecycle:
New from this manufacturer.
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