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MAT01GH

P1-P3P4-P6P7-P9P10-P12P13-P13
MAT01 Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 2. Offset Voltage vs. Temperature
Figure 3. Current Gain vs. Collector Current
Figure 4. Noise Voltage Density vs. Frequency
Figure 5. Offset Voltage vs. Time
Figure 6. Current Gain vs. Temperature
Figure 7. Noise Current Density vs. Frequency
200
150
100
50
0
–25 25 75 125100
–75 0 50 150
00282-002
OFFSET VOLTAGE (µV)
TEMPERATURE (°C)
OV < V
CB
< 30V
MAT01G
MAT01A
1000
800
600
200
0
1n 100n 10µ 1m 100m10n 1µ 100µ 10m
00282-003
CURRENT GAIN (
h
FE
)
COLLECTOR CURRENT (A)
400
T
A
= 25°C
V
CB
= 15V
MAT01A
MAT01G
1000
100
10
1
0.1 10 10k
1 100 10k
00282-004
NOISE VOLTAGE DENSITY (nV/√Hz)
FREQUENCY (Hz)
T
A
= 25°C
I
C
= 10µA WORST CASE
I
C
= 10µA TYPICAL
I
C
= 300µA TYPICAL
10
4
–2
–8
–10
1 4 8 12100 2 6 13
00282-005
ABSOLUTE CHANGE IN OFFSET VOLTAGE (µV)
TIME (Months)
6
0
–6
8
2
–4
3
7 119
5
DEVICE A
DEVICE B
DEVICE C
DEVICE D
1000
800
600
400
200
–50 0 25 75 125100–75 –25 50
00282-006
CURRENT GAIN (h
fe
)
TEMPERATURE (°C)
OV < V
CB
< 30V
(EXCLUDES I
CBO
)
100nA < I
C
< 25mA
MAT01G
MAT01A
100
10
1
0.1
0.1
10 1k1 100 10k
00282-007
NOISE CURRENT DENSITY (pA/√Hz)
FREQUENCY (Hz)
T
A
= 25°C
I
C
= 10µA
WORST CASE
I
C
= 10µA TYPICAL
I
C
= 300µA TYPICAL
Rev. D | Page 6 of 12
Data Sheet MAT01
Figure 8. Collector Current vs. Base to Emitter Voltage
Figure 9. Saturation Voltage vs. Collector Current
Figure 10. Unity-Gain Bandwidth vs. Collector Current
10mA
1µA
10nA
100pA
10µA
100µA
1mA
100nA
1nA
10pA
100 300 500 7006000 200 400 800
00282-008
COLLECTOR CURRENT (I
C
)
BASE TO EMITTER VOLTAGE (mV)
Δ < 0.3mV
Δ < 0.1mV
Δ ≈ DEVIATION FROM
STRAIGHT LINE
Δ < 0.3mV
MAT01
T
A
= 25°C
100
10
1
0.1
0.01
0.01 1 1000.1 10
00282-009
SATURATION VOLTAGE (V)
COLLECTOR CURRENT (mA)
T
A
= +25°C
T
A
= +125°C
T
A
= –55°C
I
C
= 10 × I
B
MAT01
1000
100
200
500
10
20
50
1
2
5
1µA
100µA 10mA10µA 1mA 100mA
00282-010
UNITY-GAIN BANDWIDTH PRODUCT (MHz)
COLLECTOR CURRENT (I
C
)
T
A
= 25°C
V
CE
= 10V
MAT01
Rev. D | Page 7 of 12
MAT01 Data Sheet
TEST CIRCUITS
Figure 11. Matching Measurement Circuit
Figure 12. Noise Measurement Circuit
+16.5V
50kΩ*
50kΩ*
TEST UNITS
20kΩ
OP1177
100kΩ
1%
1MΩ 1MΩ*
100kΩ
1%
–15V
V
OUT
S1
B
S1
A
S1
A
S1
B
V
OS
V
OUT1
CLOSED CLOSED
I
OS
V
OUT2
– V
OUT1
1V PER mV
1V PER nAOPEN OPEN
100pF
MAT01
100pF
50kΩ*
V–
20µA
*MATCHED TO 0.01%
+16.5V
00282-011
+15V
50kΩ*
50kΩ*
TEST
V
01
/√2
2.5MΩ
4kΩ
V
02
3.3kΩ
LOW
FREQUENCY
NOISE
NOISE
DENSITY
4MΩ 4MΩ
100Ω
4.7µF
–15V
+15V
S1
B
S2
S3
B
A
S1
A
S1
A
S1
B
V
01
/(√2 × 4MΩ)
OPEN OPEN CLOSED
A
NOISE VOLTAGE DENSITY
(PER TRANSISTOR)
NOISE CURRENT DENSITY
(PER TRANSISTOR)
LOW FREQUENCY NOISE
(REFERRED TO INPUT)
CLOSED CLOSED CLOSED A
OPEN B
V
02
PEAK-TO-PEAK
25,000
CLOSED CLOSED
2pF
MAT01
2pF
50kΩ*
–15V
20µA720kΩ
*MATCHED TO 0.01%
S2 S3**
READING
00282-012
V
01
SPECTRUM
ANALYZER
OR
QUAN-TECH
IC NOISE
ANALYZER
2181/2283
**A AND B REFER TO THE THROW POSITION OF THE SWITCH
Rev. D | Page 8 of 12
P1-P3P4-P6P7-P9P10-P12P13-P13

MAT01GH

Mfr. #:
Buy MAT01GH
Manufacturer:
Analog Devices Inc.
Description:
Bipolar Transistors - BJT MATCHED MONO DUAL NPN
Lifecycle:
New from this manufacturer.
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