MAT01GH Datasheet MAT01GHZ, MAT01AHZ, MAT01GH | P4-P6

Data Sheet MAT01

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

V

CB

= 15 V, I

C

= 10 µA, T

A

= 25°C, unless otherwise noted.

Table 1.

Parameter Symbol Test Conditions/Comments

MAT01AH MAT01GH

Unit Min Typ Max Min Typ Min

VOLTAGE

Breakdown Voltage BV

CEO

I

C

= 100 µA 45 45 V

Offset Voltage V

OS

0.04 0.1 0.10 0.5 mV

Offset Voltage Stability

First Month

1

V

OS

/Time 2.0 2.0 µV/Mo

Long Term

2

0.2 0.2 µV/Mo

CURRENT

Offset Current I

OS

0.1 0.6 0.2 3.2 nA

Bias Current I

B

13 20 18 40 nA

Current Gain h

FE

I

C

= 10 nA 590 430

I

C

= 10 µA 500 770 250 560

I

C

= 10 mA

840

610

Current Gain Match

∆h

FE

I

C

= 10 µA

0.7

3.0

1.0

8.0

%

100 nA ≤ I

C

≤ 10 mA 0.8 1.2 %

NOISE

Low Frequency Noise Voltage e

n

p-p 0.1 Hz to 10 Hz

3

0.23 0.4 0.23 0.4 µV p-p

Broadband Noise Voltage e

n

rms 1 Hz to 10 kHz 0.60 0.60 µV rms

Noise Voltage Density e

n

f

O

= 10 Hz

3

7.0 9.0 7.0 9.0 nV/√Hz

f

O

= 100 Hz

3

6.1 7.6 6.1 7.6 nV/√Hz

f

O

= 1000 Hz

3

6.0 7.5 6.0 7.5 nV/√Hz

OFFSET VOLTAGE/CURRENT

Offset Voltage Change ∆V

OS

/∆V

CB

0 ≤ V

CB

≤ 30 V 0.5 3.0 0.8 8.0 µV/V

Offset Current Change ∆I

OS

/∆V

CB

0 ≤ V

CB

≤ 30 V 2 15 3 70 pA/V

LEAKAGE

Collector to Base Leakage Current I

CBO

V

CB

= 30 V, I

E

= 0

4

15 50 25 200 pA

Collector to Emitter Leakage Current I

CES

V

CE

= 30 V, V

BE

= 0

4, 5

50 200 90 400 pA

Collector to Collector Leakage Current I

CC

V

CC

= 30 V

5

20 200 30 400 pA

SATURATION

Collector Saturation Voltage V

CE(SAT)

I

B

= 0.1 mA, I

C

= 1 mA 0.12 0.20 0.12 0.25 V

I

B

= 1 mA, I

C

= 10 mA

0.8

V

GAIN BANDWIDTH PRODUCT f

T

V

CE

= 10 V, I

C

= 10 mA 450 450 MHz

CAPACITANCE

Output Capacitance C

OB

V

CB

= 15 V, I

E

= 0 2.8 2.8 pF

Collector to Collector Capacitance C

CC

V

CC

= 0 8.5 8.5 pF

1

Exclude first hour of operation to allow for stabilization.

2

Parameter describes long-term average drift after first month of operation.

3

Sample tested.

4

The collector to base (I

CBO

) and collector to emitter (I

CES

) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a

potential that is lower than either collector voltage.

5

I

CC

and I

CES

are guaranteed by measurement of I

CBO

.

Rev. D | Page 3 of 12

MAT01 Data Sheet

V

CB

= 15 V, I

C

= 10 µA, −55°C ≤ T

A

≤ +125°C, unless otherwise noted.

Table 2.

Parameter Symbol Test Conditions/Comments

MAT01AH MAT01GH

Unit Min Typ Max Min Typ Min

OFFSET VOLTAGE/CURRENT

Offset Voltage

V

OS

0.06

0.15

0.14

0.70

mV

Average Offset Voltage Drift

1

TCV

OS

0.15 0.50 0.35 1.8 µV/°C

Offset Current I

OS

0.9 8.0 1.5 15.0 nA

Average Offset Current Drift

2

TCI

OS

10 90 15 150 pA/°C

BIAS CURRENT Ι

Β

28 60 36 130 nA

CURRENT GAIN h

FE

167 400 77 300

LEAKAGE CURRENT

Collector to Base Leakage Current I

CBO

T

A

= 125°C, V

CB

= 30 V, I

E

= 0

3

15 80 25 200 nA

Collector to Emitter Leakage Current I

CES

T

A

= 125°C, V

CE

= 30 V, V

BE

= 0

1, 3

50 300 90 400 nA

Collector to Collector Leakage Current I

CC

T

A

= 125°C, V

CC

= 30 V

1

30 200 50 400 nA

1

Guaranteed by V

OS

test

( )

for

BE

V

OS

V

T

OS

V

OS

TCV <<≅

, T = 298 K for T

A

= 25°C.

2

Guaranteed by I

OS

test limits over temperature.

3

The collector to base (I

CBO

) and collector to emitter (I

CES

) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a

potential that is lower than either collector voltage.

Rev. D | Page 4 of 12

Data Sheet MAT01

Rev. D | Page 5 of 12

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter

1

Rating

Breakdown Voltage of

Collector to Base Voltage (BV

CBO

) 45 V

Collector to Emitter Voltage (BV

CEO

) 45 V

Collector to Collector Voltage (BV

CC

) 45 V

Emitter to Emitter Voltage (BV

EE

) 45 V

Emitter to Base Voltage (BV

EBO

)

2

5 V

Current

Collector (I

C

) 25 mA

Emitter (I

E

) 25 mA

Total Power Dissipation

Case Temperature ≤ 40°C

3

1.8 W

Ambient Temperature ≤ 70°C

4

500 mW

Temperature Range

Operating −55°C to +125°C

Junction −55°C to +150°C

Storage −65°C to +150°C

Lead Temperature (Soldering, 60 sec) 300°C

1

Absolute maximum ratings apply to packaged devices.

2

Application of reverse bias voltages in excess of rating shown can result in

degradation of h

FE

and h

FE

matching characteristics. Do not attempt to

measure BV

EBO

greater than the 5 V rating.

3

Rating applies to applications using heat sinking to control case

temperature. Derate linearity at 16.4 mW/°C for case temperatures above

40°C.

4

Rating applies to applications not using heat sinking; device in free air only.

Derate linearity at 6.3 mW/°C for ambient temperatures above 70°C.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

ESD CAUTION

MAT01GH

MAT01GH

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