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IS61C6416AL-12TLI-TR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
10
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/08/05
ISSI
®
IS61C6416AL IS64C6416AL
IS62C6416AL IS65C6416AL
WRITE CYCLE NO. 2
(OE is HIGH During Write Cycle)
(1,2)
WRITE CYCLE NO. 3
(OE is LOW During Write Cycle)
(1)
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if OE
≥
VIH.
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
DIN
OE
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR2.eps
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR3.eps
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
11
Rev. B
06/08/05
ISSI
®
IS61C6416AL IS64C6416AL
IS62C6416AL IS65C6416AL
WRITE CYCLE NO. 4
(UB/LB Back to Back Write)
DATA UNDEFINED
t WC
ADDRESS 1 ADDRESS 2
t WC
HIGH-Z
t PBW
WORD 1
LOW
WORD 2
UB_CEWR4.eps
t HD
t SA
t HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
DIN
OE
DATAIN
VALID
t LZWE
t SD
t PBW
DATAIN
VALID
t SD
t HD
t SA
t HA t HA
12
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/08/05
ISSI
®
IS61C6416AL IS64C6416AL
IS62C6416AL IS65C6416AL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter Test Condition Min. Max. Unit
VDR VDD for Data Retention See Data Retention Waveform 2.0 5.5 V
IDR Data Retention Current VDD = 2.0V, CE ≥ VDD – 0.2V Com. — 90 µA
VIN ≥ VDD – 0.2V, or VIN
≤
VSS + 0.2V
Ind. — 100
Auto. — 125
typ.
(1)
50
tSDR Data Retention Setup Time See Data Retention Waveform 0 — ns
tRDR Recovery Time See Data Retention Waveform tRC —ns
Note:
1. Typical Values are measured at V
DD
= 5V, T
A
= 25
o
C and not 100% tested.
DATA RETENTION WAVEFORM (
CECE
CECE
CE Controlled)
VDD
CE ≥ VDD
- 0.2V
t
SDR
t
RDR
V
DR
CE
GND
4.5V
2.2V
Data Retention Mode
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

IS61C6416AL-12TLI-TR

Mfr. #:
Buy IS61C6416AL-12TLI-TR
Manufacturer:
ISSI
Description:
SRAM 1Mb 64Kx16 12ns 5v Async SRAM
Lifecycle:
New from this manufacturer.
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