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IS61C6416AL-12TLI-TR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/08/05
ISSI
®
IS61C6416AL IS64C6416AL
IS62C6416AL IS65C6416AL
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 5 pF
COUT Output Capacitance VOUT = 0V 7 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, VDD = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VDD + 0.5 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND ≤ VIN ≤ VDD Com. –1 1 µA
Ind. –2 2
Auto. –5 5
ILO Output Leakage GND ≤ VOUT ≤ VDD Com. –1 1 µA
Outputs Disabled Ind. –2 2
Auto. –5 5
Note:
1. V
IL = –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
5
Rev. B
06/08/05
ISSI
®
IS61C6416AL IS64C6416AL
IS62C6416AL IS65C6416AL
IS61C6416AL/IS64C6416AL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-12 ns -15 ns
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
I
CC1 VDD Operating VDD = VDD MAX., CE = VIL
Com.
—40 mA
Supply Current IOUT = 0 mA, f = 0
Ind.
—45
Auto.
—50
I
CC2 VDD Dynamic Operating VDD = VDD MAX., CE = VIL
Com.
—50 mA
Supply Current IOUT = 0 mA, f = fMAX
Ind.
—55
Auto.
—60
typ.
(2)
—35
I
SB1 TTL Standby Current VDD = VDD MAX.,
Com.
—1 mA
(TTL Inputs) VIN = VIH or VIL
Ind.
—1
CE ≥ VIH, f = 0
Auto.
—1
ISB2 CMOS Standby VDD = VDD MAX.,
Com.
— 350 µA
Current (CMOS Inputs) CE
≤
VDD – 0.2V,
Ind.
— 400
VIN ≥ VDD – 0.2V, or
Auto.
— 450
VIN
≤
0.2V, f = 0
typ.
(2)
— 200
Note:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 5V, TA = 25% and not 100% tested.
IS62C6416AL/IS65C6416AL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-35 ns -45 ns
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
ICC Average operating CE = VIL, Com. — 10 mA
Current VIN = VIH or VIL, Ind. — 15
I I/O= 0 mA Auto. — 20
ICC1VDD Dynamic Operating VDD = Max., CE = VIL Com. — 35 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 40
VIN = VIH or VIL Auto. — 45
ISB1 TTL Standby Current VDD = Max., Com. — 1 mA
(TTL Inputs) VIN = VIH or VIL, CE ≥ VIH, Ind. — 1.5
f = 0 Auto. — 2
ISB2 CMOS Standby VDD = Max., Com. — 5 µA
Current (CMOS Inputs) CE ≥ V DD – 0.2V, Ind. — 10
VIN ≥ VDD – 0.2V, Auto. — 15
or VIN ≤ V SS + 0.2V, f = 0
Note:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/08/05
ISSI
®
IS61C6416AL IS64C6416AL
IS62C6416AL IS65C6416AL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-12 -15 -35 -45
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit
tRC Read Cycle Time 12 — 15 — 35 — 45 — ns
tAA Address Access Time — 12 — 15 — 35 — 45 ns
tOHA Output Hold Time 3 — 3 — 3 — 3 — ns
tACE CE Access Time — 12 — 15 — 35 — 45 ns
tDOE OE Access Time — 6 — 7 — 10 — 20 ns
tHZOE
(2)
OE to High-Z Output 0 6 0 6 0 10 0 15 ns
tLZOE
(2)
OE to Low-Z Output 0 — 0 — 3 — 5 — ns
tHZCE
(2
CE to High-Z Output 0 7 0 8 0 10 0 15 ns
tLZCE
(2)
CE to Low-Z Output 2 — 2 — 3 — 5 — ns
tBA LB, UB Access Time — 6 — 6 — 35 — 45 ns
tHZB LB, UB to High-Z Output 0 6 0 7 0 10 0 15 ns
tLZB LB, UB to Low-Z Output 0 — 0 — 0 — 0 — ns
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 3 ns
Input and Output Timing 1.5V
and Reference Level
Output Load See Figures 1 and 2
480 Ω
30 pF
Including
jig and
scope
255 Ω
OUTPUT
5V
480 Ω
5 pF
Including
jig and
scope
255 Ω
OUTPUT
5V
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0
to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
Figure 1
Figure 2
AC TEST LOADS
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

IS61C6416AL-12TLI-TR

Mfr. #:
Buy IS61C6416AL-12TLI-TR
Manufacturer:
ISSI
Description:
SRAM 1Mb 64Kx16 12ns 5v Async SRAM
Lifecycle:
New from this manufacturer.
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