74LVT273_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 10 September 2008 5 of 17
NXP Semiconductors
74LVT273
3.3 V octal D-type flip-flop
6. Functional description
[1] H = HIGH voltage level; h = HIGH voltage level one set-up time prior to the prior to the LOW-to-HIGH clock transition;
L = LOW voltage level; l = LOW voltage level one set-up time prior to the prior to the LOW-to-HIGH clock transition;
X = Don’t care; ↑ = LOW-to-HIGH clock transition; Q0 = output as it was.
7. Limiting values
[1] The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
[2] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability.
[3] For SO20 packages: above 70 °C derate linearly with 8 mW/K.
For SSOP20 and TSSOP20 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN20 packages: above 60 °C derate linearly with 4.5 mW/K.
8. Recommended operating conditions
Table 3. Function selection
Inputs Outputs Operating mode
MR CP Dn Qn
L X X L Reset (clear)
H ↑ h H Load 1
H ↑ l L Load 0
H L X Q0 Retain state
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +4.6 V
V
I
input voltage
[1]
−0.5 +7.0 V
V
O
output voltage Output in OFF or HIGH state
[1]
−0.5 +7.0 V
I
IK
input clamping current V
I
< 0 V −50 - mA
I
OK
output clamping current V
O
< 0 V −50 - mA
I
O
output current output in LOW state - 128 mA
output in HIGH state −64 - mA
T
stg
storage temperature −65 +150 °C
T
j
junction temperature
[2]
- 150 °C
P
tot
total power dissipation T
amb
= −40 °C to +85 °C
[3]
500 mW
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 2.7 - 3.6 V
V
I
input voltage 0 - 5.5 V
I
OH
HIGH-level output current −32 - - mA
