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FDY4001CZ

P1-P3P4-P6P7-P9
tm
August 2006
FDY4001CZ Complementary N & P-Channel PowerTrench
®
MOSFET
©2006 Fairchild Semiconductor Corporation
FDY4001CZ Rev. B
www.fairchildsemi.com1
FDY4001CZ
Complementary N & P-Channel PowerTrench
®
MOSFET
Features
Q1: N-Channel
Max r
DS(on)
= 5Ω at V
GS
= 4.5V, I
D
= 200mA
Max r
DS(on)
= 7Ω at V
GS
= 2.5V, I
D
= 175mA
Max r
DS(on)
= 9Ω at V
GS
= 1.8V, I
D
= 150mA
Q2: P-Channel
Max r
DS(on)
= 8Ω at V
GS
= -4.5V, I
D
= -150mA
Max r
DS(on)
= 12Ω at V
GS
= -2.5V, I
D
= -125mA
Max r
DS(on)
= 15Ω at V
GS
= -1.8V, I
D
= -100mA
ESD protection diode (note 3)
RoHS Compliant
General Description
This Complementary N & P-Channel MOSFET has been
designed using Fairchild Semiconductor’s advanced Power
Trench
®
process to optimize the r
DS(ON)
@ V
GS
=2.5V and
specify the r
DS(ON)
@ V
GS
= 1.8V.
Applications
Level shifting
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Q1 Q2 Units
V
DS
Drain to Source Voltage 20 -20 V
V
GS
Gate to Source Voltage ±12 ±8 V
I
D
Drain Current -Continuous (Note 1a) 200 -150
mA
-Pulsed 1000 -1000
P
D
Power Dissipation (Steady State) (Note 1a)
(Note 1b)
625
mW
446
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to 150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 200
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 280
Device Marking Device Package Reel Size Tape Width Quantity
F FDY4001CZ SC89-6 7” 8mm 3000units
1
2
3
4
5
6
S2
G1
D1
4
6
2
3
1
5
S1
G2
D2
FDY4001CZ Complementary N & P-Channel PowerTrench
®
MOSFET
FDY4001CZ Rev. B
www.fairchildsemi.com2
Electrical Characteristics T
J
= 25°C unlessotherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Volt-
age
I
D
= 250µA, V
GS
= 0V
I
D
= -250µA, V
GS
= 0V
Q1
Q2
20
-20
V
∆B
VDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250µA, referenced to 25°C
I
D
= -250µA, referenced to 25°C
Q1
Q2
14
-15
mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16V, V
DS
=0V
V
DS
= -16V, V
DS
=0V
Q1
Q2
1
-3
µA
I
GSS
Gate-Body Leakage
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
V
GS
= ±8V, V
DS
= 0V
Q1
Q1
Q2
±10
±1
±10
µA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
V
GS
= V
DS
, I
D
= -250µA
Q1
Q2
0.6
-0.65 -1.0
1.5
-1.5
V
∆V
GS(th)
∆T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250µA, referenced to 25°C
I
D
= -250µA, referenced to 25°C
Q1
Q2
2.8
-3
mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 2.5V, I
D
= 175mA
V
GS
= 1.8V, I
D
= 150mA
V
GS
= 1.5V, I
D
= 20mA
V
GS
= 4.5V, I
D
= 200mA,T
J
= 125°C
Q1
5
7
9
10
7
Ω
V
GS
= -4.5V, I
D
= --150mA
V
GS
= -2.5V, I
D
= -125mA
V
GS
= -1.8V, I
D
= -100mA
V
GS
= -1.5V, I
D
= -30mA
V
GS
= -4.5V, I
D
= -150mA,T
J
=125°C
Q2
8
12
15
20
12
g
FS
Forward Transconductance
V
DS
= 5V, I
D
= 200mA
V
DS
= -5V, I
D
= -150mA
Q1
Q2
1.1
0.7
S
(note 2)
Dynamic Characteristics
C
iss
Input Capacitance
Q1
V
DS
= 10V, V
GS
= 0V, f = 1MHz
Q2
V
DS
= -10V, V
GS
= 0V, f = 1MHz
Q1
Q2
60
100
pF
C
oss
Output Capacitance
Q1
Q2
20
30
pF
C
rss
Reverse Transfer Capacitance
Q1
Q2
10
15
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
Q1
V
DD
= 10V, I
D
= 1A,
V
GS
= 4.5V, R
g
= 6Ω
Q2
V
DD
= -10V, I
D
= -0.5A,
V
GS
= -4.5V, R
g
= 6Ω
Q1
Q2
6
6
12
12
ns
t
r
Rise Time
Q1
Q2
8
13
16
23
ns
t
d(off)
Turn-Off Delay Time
Q1
Q2
8
8
16
16
ns
t
f
Fall Time
Q1
Q2
2.4
1
4.8
2
ns
Q
g
Total Gate Charge
Q1
V
DS
= 10V, I
D
= 200mA, V
GS
= 4.5V
Q2
V
DS
= -10V, I
D
= -150mA, V
GS
= -4.5V
Q1
Q2
0.8
1.0
1.1
1.4
nC
Q
gs
Gate to Source Gate Charge
Q1
Q2
0.16
0.2
nC
Q
gd
Gate to Drain “Miller”Charge
Q1
Q2
0.26
0.3
nC
FDY4001CZ Complementary N & P-Channel PowerTrench
®
MOSFET
FDY4001CZ Rev. B
www.fairchildsemi.com3
Electrical Characteristics T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Volt-
age
V
GS
= 0V, I
S
= 150mA (Note 2)
V
GS
= 0V, I
S
= -150mA (Note 2)
Q1
Q2
0.7
-0.8
1.2
-1.2
V
t
rr
Reverse Recovery Time
Q1
I
F
= 200mA, di/dt = 100A/µs
Q2
I
F
= -150mA, di/dt = 100A/µs
Q1
Q2
12
11
ns
Q
rr
Reverse Recovery Charge
Q1
Q2
3
2
nC
Notes:
1: R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design.
2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
a) 200°C/W when mounted
on a 1 in
2
pad of 2 oz copper
b) 280°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1:1 on letter size paper
P1-P3P4-P6P7-P9

FDY4001CZ

Mfr. #:
Buy FDY4001CZ
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET SC89-6 COMP NCH & PCH POWER T
Lifecycle:
New from this manufacturer.
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