FDY4001CZ

Figure 7. Gate Charge Characteristics.
0
2
4
6
8
10
00.511.522.5
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -0.15A
V
DS
= -5V
-15V
-10V
Figure 8. Capacitance vs. Drain to source
voltage.
0
25
50
75
100
125
150
048121620
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Figure 9. Maximum Safe Operating Area.
0.01
0.1
1
10
0.01 0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
1s
100ms
100
µ
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 280
o
C/W
T
A
= 25
o
C
10ms
1ms
10s
Figure 10. Single Pulse Maximum Power
Dissipation.
0
2
4
6
8
10
0.0001 0.001 0.01 0.1 1 10 100
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 280 /W
T
A
= 25
°C
°C/W
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.Transient thermal response will change
depending on the circuit board design.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r
(t)
,
NORMALIZED
EFFECTIVE
TRANSIEN
THERMAL RESISTANCE
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=280 /W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P
(p
k
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
°C
FDY4001CZ Complementary N & P-Channel PowerTrench
®
MOSFET
FDY4001CZ Rev. B
www.fairchildsemi.com7
Typical Characteristics Q2 (P-Channel)
FDY4001CZ Complementary N & P-Channel PowerTrench
®
MOSFET
FDY4001CZ Rev. B
www.fairchildsemi.com8
Dimensional Outline and Pad Layout
0.55
1.20 BSC
0.20 BSC
0.35 BSC
0.18
0.10
DETAIL A
SCALE 2 : 1
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
1.70
1.50
1.70
1.55
0.50
1.00
0.30
0.15
0.60
0.56
(0.20)
13
64
SEE DETAIL A
LAND PATTERN RECOMMENDATION
1.80
0.30
1.25
0.50
0.50
Rev. I20
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2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FAST
®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET
®
VCX™
Wire™
Across the board. Around the world.™
The Power Franchise
®
Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

FDY4001CZ

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET SC89-6 COMP NCH & PCH POWER T
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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