FDY4001CZ Datasheet FDY4001CZ | P4-P6

Figure 1. On-Region Characteristics

0

0.2

0.4

0.6

0.8

1

0 0.25 0.5 0.75 1

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

2.5V

2.0

V

GS

= 4.5V

3.0

V

3.5

V

1.5V

1.8V

. Figure 2. Normalized on-Resistance vs. Drain

Current and Gate Voltage

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

3.2

3.4

0 0.2 0.4 0.6 0.8 1

I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= 1.8V

2.5V

3.5V

4.5V

3.0V

2.0V

.

Figure 3. Normalized on-Resistance vs.

Temperature

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= 200mA

V

GS

= 4.5V

.

Figure 4. On-Resistance vs. Gate-to-Source

Votlage

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1234

5

V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= 100mA

T

A

= 125

o

C

T

A

= 25

o

C

.

Figure 5. Transfer Characteristics

0

0.3

0.6

0.9

1.2

1.5

0.511.522.53

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

T

A

= -55

o

C

25

o

C

12

5

o

C

V

DS

= 5V

. Figure 6. Source to Drain Diode Forward Voltage

vs. Source Current and Temperature

0.0001

0.001

0.01

0.1

1

0 0.2 0.4 0.6 0.8 1 1.

2

V

SD

, BODY DIODE FORWARD VOLTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A)

T

A

= 125

o

C

25

o

C

-55

o

C

V

GS

= 0V

.

FDY4001CZ Complementary N & P-Channel PowerTrench

®

MOSFET

FDY4001CZ Rev. B

www.fairchildsemi.com4

Typical Characteristics Q1 (N-Channel)

Figure 7. Gate Charge Characteristics

0

1

2

3

4

5

00.20.40.60.81

Q

g

, GATE CHARGE (nC)

V

GS

, GATE-SOURCE VOLTAGE (V)

I

D

= 600mA

V

DS

= 5V

15V

10V

. Figure 8. Capacitance vs. Drain to source

voltage.

0

10

20

30

40

50

60

70

80

90

100

0 4 8 12 16 2

0

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

C

iss

C

rss

C

oss

f = 1MHz

V

GS

= 0 V

Figure 9. Maximum Safe Operating Area

0.01

0.1

1

10

0.1 1 10 10

0

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

DC

10s

1s

100ms

R

DS(ON)

LIMIT

V

GS

= 4.5V

SINGLE PULSE

R

θJA

= 280

o

C/W

T

A

= 25

o

C

10ms

1ms

. Figure 10. Single Pulse Maximum Power

Dissipation

0

5

10

15

20

25

30

0.0001 0.001 0.01 0.1 1 10 100 100

0

t

1

, TIME (sec)

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

R

θJA

= 280°C/W

T

A

= 25°C

.

Figure 11. Transient Thermal Response Curve.

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t

1

, TIME (sec)

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

R

θJA

(t) = r(t) * R

θJA

R

θJA

=280 °C/W

T

J

- T

A

= P * R

θJA

(t)

Duty Cycle, D = t

1

/ t

2

P

(p

k

)

t

1

t

2

SINGLE PULS

E

D=0.5

0.2

0.1

0.05

0.02

0.01

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDY4001CZ Complementary N & P-Channel PowerTrench

®

MOSFET

FDY4001CZ Rev. B

www.fairchildsemi.com5

Typical Characteristics Q1 (N-Channel)

Figure 1. On-Region Characteristics.

0

0.2

0.4

0.6

0.8

1

00.511.52

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

-I

D

, DRAIN CURRENT (A)

V

GS

= -4.5V

-3.0V

-1.8V

-2.0V

-2.5V

-3.5V

-1.5V

Figure 2. Normalized on-Resistance vs. Drain

Current and Gate Voltage.

0

1

2

3

4

5

0 0.2 0.4 0.6 0.8 1

-I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

=-1.5V

-2.5V

-3.0V

-4.5V

-1.8V

-2.0V

-3.5V

Figure 3. Normalized on-Resistance vs.

Temperature.

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= -0.15A

V

GS

= -4.5V

Figure 4.

0.25

0.5

0.75

1

1.25

1.5

1.75

2

0246810

-V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= -0.075A

T

A

= 125

o

C

T

A

= 25

o

C

On-Resistance vs. Gate-to-Source

Voltage.

Figure 5. Transfer Characteristics.

0

0.2

0.4

0.6

0.8

1

0.511.522.5

-V

GS

, GATE TO SOURCE VOLTAGE (V)

-I

D

, DRAIN CURRENT (A)

T

A

= 125

o

C

25

o

C

-55

o

C

V

DS

= -5V

Figure 6. Source to Drain Diode Forward

Voltage vs. Source Current and Temperature.

0.0001

0.001

0.01

0.1

1

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-V

SD

,

BODY DIODE FORWARD VOLTAGE (V)

-I

S

, REVERSE DRAIN CURRENT (A)

V

GS

= 0V

T

A

= 125

o

C

25

o

C

-55

o

C

FDY4001CZ Complementary N & P-Channel PowerTrench

®

MOSFET

FDY4001CZ Rev. B

www.fairchildsemi.com6

Typical Characteristics Q2 (P-Channel)

FDY4001CZ

FDY4001CZ

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