Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PSMN8R5-100XS
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F
(SOT186A)
29 November 2012 Product data sheet
Scan or click this QR code to view the latest information for this product
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to
175C. This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses
Isolated package
Suitable for standard level gate drive
1.3 Applications
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 1 - - 49 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 55 W
Static characteristics
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 12; Fig. 13
4.5 6.4 8.5 R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A; T
j
= 100 °C;
Fig. 13
- 11.18 14.9
Dynamic characteristics
Q
GD
gate-drain charge - 30 - nC
Q
G(tot)
total gate charge
V
GS
= 10 V; I
D
= 10 A; V
DS
= 50 V;
Fig. 14; Fig. 15
- 100 - nC
NXP Semiconductors
PSMN8R5-100XS
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
PSMN8R5-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 29 November 2012 2 / 14
Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 49 A;
V
sup
≤ 100 V; unclamped; R
GS
= 50 Ω;
Fig. 3
- - 439 mJ
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 D drain
3 S source
mb mounting base; isolated
321
mb
TO-220F (SOT186A)
S
D
G
mbb076
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN8R5-100XS TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
4. Marking
Table 4. Marking codes
Type number Marking code
PSMN8R5-100XS PSMN8R5-100XS
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 100 V

PSMN8R5-100XSQ

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET PSMN8R5-100XS/TO-220F/STANDARD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet