NXP Semiconductors
PSMN8R5-100XS
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
PSMN8R5-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 29 November 2012 3 / 14
Symbol Parameter Conditions Min Max Unit
V
DGR
drain-gate voltage T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
= 20 kΩ - 100 V
V
GS
gate-source voltage -20 20 V
V
GS
= 10 V; T
mb
= 25 °C; Fig. 1 - 49 AI
D
drain current
V
GS
= 10 V; T
mb
= 100 °C; Fig. 1 - 34.6 A
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C; Fig. 4 - 196 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - 55 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
T
sld(M)
peak soldering temperature - 260 °C
Source-drain diode
I
S
source current T
mb
= 25 °C - 46 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 196 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 49 A;
V
sup
≤ 100 V; unclamped; R
GS
= 50 Ω;
Fig. 3
- 439 mJ
003aak428
0
10
20
30
40
50
0 50 100 150 200
T
mb
(
°
C)
I
D
(A)
Fig. 1. Continuous drain current as a function of
mounting base temperature
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
