NXP Semiconductors
PSMN8R5-100XS
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
PSMN8R5-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 29 November 2012 6 / 14
Symbol Parameter Conditions Min Typ Max Unit
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - 2 100 nAI
GSS
gate leakage current
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C - 2 100 nA
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 12; Fig. 13
4.5 6.4 8.5 mΩ
V
GS
= 10 V; I
D
= 10 A; T
j
= 100 °C;
Fig. 13
- 11.18 14.9 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A; T
j
= 175 °C;
Fig. 13
- 16.95 22.6 mΩ
R
G
internal gate
resistance (AC)
f = 1 MHz 0.36 0.71 1.42 Ω
Dynamic characteristics
Q
G(tot)
total gate charge - 100 - nC
Q
GS
gate-source charge - 19 - nC
Q
GS(th)
pre-threshold gate-
source charge
- 14 - nC
Q
GS(th-pl)
post-threshold gate-
source charge
- 5 - nC
Q
GD
gate-drain charge
I
D
= 10 A; V
DS
= 50 V; V
GS
= 10 V;
Fig. 14; Fig. 15
- 30 - nC
V
GS(pl)
gate-source plateau
voltage
I
D
= 10 A; V
DS
= 50 V; Fig. 14; Fig. 15 - 4 - V
C
iss
input capacitance V
DS
= 50 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; Fig. 16; Fig. 17
- 5512 - pF
C
oss
output capacitance V
DS
= 50 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; Fig. 16
- 380 - pF
C
rss
reverse transfer
capacitance
V
DS
= 50 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; Fig. 16; Fig. 17
- 256 - pF
t
d(on)
turn-on delay time - 21.5 - ns
t
r
rise time - 30 - ns
t
d(off)
turn-off delay time - 83 - ns
t
f
fall time
V
DS
= 50 V; R
L
= 5 Ω; V
GS
= 10 V;
R
G(ext)
= 5 Ω; T
j
= 25 °C
- 40 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 10 A; V
GS
= 0 V; T
j
= 25 °C; Fig. 18 - 0.77 1.2 V
t
rr
reverse recovery time - 53 - ns
Q
r
recovered charge
I
S
= 10 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 50 V
- 124 - nC
