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PD55003STR-E
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P29
Typical performance
PD55003-E
10/29
Doc ID 12273 Rev
4
4.2
P
erf
ormance for the P
o
werSO-10RF straight lead
Figure 17.
Output power vs. input po
wer
Figure 18.
Output power vs. in
put power
0
0.05
0.1
0.15
0.2
0.25
0.
3
Pin, INPUT POWER (W
)
0
1
2
3
4
5
6
7
Pout, OUTPUT POWER (W)
Vdd = 12.5 V
Idq = 50
mA
Tu
n
e
f
o
r
P
o
=
3
W
520 MHz
500 M
Hz
480 MHz
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.
1
Pin, INPUT POWER (W
)
0
1
2
3
4
5
6
7
Pout, OUTPUT POWER (W)
Vdd = 12.5 V
Idq = 50 mA
Tu
n
e
f
o
r
P
o
=
6
W
520 MHz
500 MHz
480 MHz
Figure 19.
Drain efficiency vs. output po
wer
F
igur
e 20.
Drain efficienc
y vs. output po
wer
Figure 21.
P
ower gain vs
. output powe
r
Figure 22.
Return loss vs. output power
0
1234567
Pout, OUTPU
T POWE
R (W)
20
30
40
50
60
70
80
Nd, DRAIN EFFICIENCY (%)
Vdd = 12.5 V
Idq = 50 mA
Tu
n
e
f
o
r
P
o
=
3 W
520 MHz
500 MHz
480 MHz
0
1234567
Pout, OUTPU
T POWE
R (W)
20
30
40
50
60
70
80
Nd, DRAIN EFFICIENCY (%)
Vdd = 12.5 V
Idq = 50 mA
Tu
n
e
f
o
r
P
o
=
6
W
520 MHz
500 MHz
480 MHz
0
1234567
Pout, OUTPUT POWER (W)
4
6
8
10
12
14
16
18
20
Gp, POWER GAIN (dB)
Vdd = 12
.5 V
Idq = 50 mA
Tu
n
e
f
o
r
Po
=
3
W
520 MHz
500 MHz
480 MHz
0
1234567
Pout, OUTPUT POWER (W
)
-40
-30
-20
-10
0
Rl, INPUT RETURN LOSS (dB)
Vdd = 12.5 V
Idq = 50 mA
Tu
n
e
f
o
r
P
o
=
3
W
520 MHz
500 MHz
480 MHz
PD55003-E
Typical performance
Doc ID 12273 Rev
4
11/29
Figure 23.
Output power vs. bias cur
rent
Figure 24.
Drain efficienc
y vs. bias current
0
100
200
300
400
500
600
IDQ, BIAS CURRENT
(mA)
2.6
2.8
3
3.2
3.4
3.6
3.8
4
Pout, OUTPUT POWER (W)
Vdd = 12.5 V
Pin=17.7 dBm
T
un
e for Po=3 W
520 MHz
500 MHz
480 MHz
0
100
200
300
400
500
600
IDQ,BIAS CURRENT
(mA)
10
20
30
40
50
60
Nd, DRAIN EFFICIENCY (%)
Vdd = 12.5
V
Pin=17.7
dBm
T
un
e for Po=3 W
520 MHz
500 MHz
480 MHz
Figure 25.
Output power vs. suppl
y voltage
Figure 26.
Drain efficiency vs. s
upply v
oltage
8
9
10
11
12
13
14
15
VDD, SUPPLY VOLTAGE (V)
1.5
2
2.5
3
3.5
Pout, OUTPUT POWER (W)
Idq=50 mA
Pin=17.7
dBm
T
un
e for Po=3 W
520 MHz
500 MHz
480 MHz
8
9
10
11
12
13
14
15
VDD, SUPPLY VOLTAGE (V)
0
10
20
30
40
50
60
Nd, DRAIN EFFICIENCY (%)
Idq=50 mA
Pin=17
.7 dBm
T
une for Po=3 W
520 MHz
500 MHz
480 MHz
Figure 27.
Output power
vs. gate v
oltage
0
12345
VGS, GATE-SO
URCE VOLTAGE (V)
0
1
2
3
4
5
Pout, OUTPUT POWER (W)
Vdd=12.5V
Pin=17.7 dBm
Tu
n
e
f
o
r
P
o
=
3
W
520 MHz
500 MHz
480 MHz
Typical performance (860 MHz)
PD55003-E
12/29
Doc ID 12273 Rev
4
5
T
ypical perf
ormance (860 MHz)
5.1
P
erf
ormance for the P
o
werSO-10RF formed lead
Figure 28.
Output power vs. input po
wer
Figure 29.
Drain efficiency vs. ou
tput power
Figure 30.
Input return loss
vs. output po
wer
0
0.05
0.1
0.15
0.2
0.25
0.3
Pin (W
)
0
1
2
3
4
5
Pout (W)
Vdd = 12.5V
Idq = 50 mA
01
2
3
4
5
Pout (W)
10
20
30
4
0
50
60
Nd (%)
Vdd = 12.5V
Idq = 50 mA
01
2
3
4
5
Pout (W
)
-30
-25
-20
-15
-10
-5
0
Rl (dB)
Vdd = 12.5V
Idq = 50 mA
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P29
PD55003STR-E
Mfr. #:
Buy PD55003STR-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors POWER R.F.
Lifecycle:
New from this manufacturer.
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