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PD55003TR-E
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P29
PD55003-E
Typical performance
Doc ID 12273 Rev
4
7/29
4.1
P
erf
ormance for the P
o
werSO-10RF formed lead
Figure 7.
Output po
wer vs. input power
Figure 8.
Output powe
r vs. input power
0
0.05
0.1
0.15
0.2
0.25
0.3
0
.3
5
Pin, INPUT POWER (W)
0
1
2
3
4
5
6
7
Pout, OUTPUT POWER (W)
Vdd = 12
.5 V
Idq = 50 mA
Tu
n
e
f
o
r
P
o
=
3
W
520 MHz
500 MHz
480 MHz
0
0.01
0.02
0.03
0.04
0.0
5
0.06
0.07
0.08
0
.09
0.1
Pin, INPUT POWER (W)
0
1
2
3
4
5
6
7
Pout, OUTPUT POWER (W)
Vdd = 12.5 V
Idq = 50
mA
Tu
n
e
f
o
r
P
o
=
6
W
520 MHz
500 MHz
480 MH
z
Figure 9.
Drain efficiency vs. output po
wer
Fi
gure 10.
Drain efficien
cy vs. outpu
t power
01
23
45
67
Pout, OUTPUT POW
ER (W)
20
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
Vdd = 12.5 V
Idq = 50 mA
T
une f
or Po=3 W
520 MHz
500 MHz
480 MHz
0
1234
5
67
Pout, OUTPUT POW
ER (W)
20
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
Vdd = 12.5 V
Idq = 50 mA
Tu
n
e
f
o
r
P
o
=
6
W
520 MHz
500 MHz
480 MHz
Typical performance
PD55003-E
8/29
Doc ID 12273 Rev
4
Figure 11.
P
ower gain vs
. output powe
r
Figure 12.
Return loss vs. output power
0
1
234567
Pout, OUTPU
T POWE
R (W)
4
6
8
10
12
14
16
18
20
Gp, POWER GAIN (dB)
Vdd = 12.5 V
Idq = 50 mA
T
une for
Po=3 W
520 MHz
500 MHz
480 MHz
0
1234567
Pout, OUTPU
T POWE
R (W)
-40
-30
-20
-10
0
Rl, INPUT RETURN LOSS (dB)
Vdd = 12
.5 V
Idq = 50 mA
T
une for Po=3 W
520 MHz
500 MHz
480 MHz
Figure 13.
Output power vs. bias cur
rent
Figure 14.
Drain efficienc
y vs. bias current
0
100
200
300
400
500
600
IDQ, BIAS CURRENT
(mA)
2.6
2.8
3
3.2
3.4
3.6
3.8
4
Pout, OUTPUT POWER (W)
Vdd = 12.5 V
Pin=17
.9 dBm
Tu
n
e
f
o
r
P
o
=
3
W
520 MHz
500 MHz
480 MHz
0
100
200
300
400
500
600
IDQ, BIAS CURRENT (mA)
0
10
20
30
40
50
60
Nd, DRAIN EFFICIENC Y(%)
Vdd = 12.5
V
Pin=17.
9 dBm
Tu
n
e
f
o
r P
o=
3
W
520 MHz
500 MHz
480 MHz
Figure 15.
Output power vs. suppl
y voltage
T
able 8.
Drain efficiency vs. suppl
y voltage
8
9
10
11
12
13
14
15
VDD, SUPPLY VOLTAG
E (V)
1.5
2
2.5
3
3.5
Pout, OUTPUT POWER (W)
Idq = 50 mA
Pin=17.9 dBm
Tu
n
e
f
o
r
P
o
=
3
W
520 MHz
500 MHz
480 MHz
8
9
10
11
12
13
14
15
VDD, SUPPLY VOLTAG
E (V)
0
10
20
30
40
50
60
Nd, DRAIN EFFICIENCY (%)
Idq = 50 mA
Pin=17.9 dBm
T
une for Po=3 W
520 MHz
500 MHz
480 MHz
PD55003-E
Typical performance
Doc ID 12273 Rev
4
9/29
Figure 16.
Output power
vs. gate v
oltage
0
12345
VGS, GATE-SOURCE VOLTAGE (V)
0
1
2
3
4
5
Pout, OUTPUT POWER (W)
Vdd = 12.5 V
Pin=17.9 dBm
Tu
n
e
f
o
r
P
o
=
3
W
520 MHz
500 MHz
480 MHz
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P29
PD55003TR-E
Mfr. #:
Buy PD55003TR-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors POWER R.F.
Lifecycle:
New from this manufacturer.
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