NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar detectors, pagers and
satellite TV tuners (SATV).
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER CODE
BFG505 %ME
BFG505/X %MK
PINNING
PIN
DESCRIPTION
BFG505 BFG505/X
1 collector collector
2 base emitter
3 emitter base
4 emitter emitter
Fig.1 Simplified outline SOT143B.
handbook, 2 columns
Top view
MSB014
12
34
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter −−20 V
V
CES
collector-emitter voltage R
BE
=0 −−15 V
I
C
collector current (DC) −−18 mA
P
tot
total power dissipation T
s
≤ 130 °C −−150 mW
h
FE
DC current gain V
CE
=6V; I
C
= 5 mA 60 120 250
C
re
feedback capacitance V
CB
=6V; I
C
=i
c
= 0; f = 1 MHz − 0.2 − pF
f
T
transition frequency V
CE
=6V; I
C
= 5 mA; f = 1 GHz − 9 − GHz
G
UM
maximum unilateral
power gain
V
CE
=6V; I
C
= 5 mA;
T
amb
=25°C; f = 900 MHz
− 20 − dB
V
CE
=6V; I
C
= 5 mA;
T
amb
=25°C; f = 2 GHz
− 13 − dB
S
21
2
insertion power gain V
CE
=6V; I
c
= 5 mA;
T
amb
=25°C; f = 900 MHz
16 17 − dB
F noise figure Γ
s
= Γ
opt
;V
CE
=6V; I
c
= 1.25 mA;
T
amb
=25°C; f = 900 MHz
− 1.2 1.7 dB
Γ
s
= Γ
opt
;V
CE
=6V; I
c
= 5 mA;
T
amb
=25°C; f = 900 MHz
− 1.6 2.1 dB
Γ
s
= Γ
opt
; V
CE
=6V; I
c
= 1.25 mA;
T
amb
=25°C; f = 2 GHz
− 1.9 − dB
Rev. 04 - 22 November 2007
